Sun, Jiandong.
Field-effect Self-mixing Terahertz Detectors [electronic resource] / by Jiandong Sun. - 1st ed. 2016. - XVIII, 126 p. 84 illus., 4 illus. in color. online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053 . - Springer Theses, Recognizing Outstanding Ph.D. Research, .
Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.
A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
9783662486818
10.1007/978-3-662-48681-8 doi
Engineering.
Solid state physics.
Semiconductors.
Microwaves.
Optical engineering.
Engineering.
Microwaves, RF and Optical Engineering.
Optics, Lasers, Photonics, Optical Devices.
Semiconductors.
Solid State Physics.
TK7876-7876.42
621.3
Field-effect Self-mixing Terahertz Detectors [electronic resource] / by Jiandong Sun. - 1st ed. 2016. - XVIII, 126 p. 84 illus., 4 illus. in color. online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053 . - Springer Theses, Recognizing Outstanding Ph.D. Research, .
Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.
A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
9783662486818
10.1007/978-3-662-48681-8 doi
Engineering.
Solid state physics.
Semiconductors.
Microwaves.
Optical engineering.
Engineering.
Microwaves, RF and Optical Engineering.
Optics, Lasers, Photonics, Optical Devices.
Semiconductors.
Solid State Physics.
TK7876-7876.42
621.3