Fossum, Jerry G., 1943-
Fundamentals of ultra-thin-body MOSFETs and FinFETs / Fundamentals of ultra-thin-body MOSFETs & FinFETs Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona. - 1 online resource (xvi, 210 pages) : digital, PDF file(s).
Title from publisher's bibliographic system (viewed on 05 Oct 2015).
Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index.
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
9781139343466 (ebook)
Metal oxide semiconductor field-effect transistors.
Integrated circuits--Very large scale integration.
TK7871.99.M44 / F67 2013
621.3815/284
Fundamentals of ultra-thin-body MOSFETs and FinFETs / Fundamentals of ultra-thin-body MOSFETs & FinFETs Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona. - 1 online resource (xvi, 210 pages) : digital, PDF file(s).
Title from publisher's bibliographic system (viewed on 05 Oct 2015).
Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index.
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
9781139343466 (ebook)
Metal oxide semiconductor field-effect transistors.
Integrated circuits--Very large scale integration.
TK7871.99.M44 / F67 2013
621.3815/284