High Mobility and Quantum Well Transistors (Record no. 53015)

000 -LEADER
fixed length control field 03736nam a22005655i 4500
001 - CONTROL NUMBER
control field 978-94-007-6340-1
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200420221258.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 130326s2013 ne | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9789400763401
-- 978-94-007-6340-1
082 04 - CLASSIFICATION NUMBER
Call Number 621.3815
100 1# - AUTHOR NAME
Author Hellings, Geert.
245 10 - TITLE STATEMENT
Title High Mobility and Quantum Well Transistors
Sub Title Design and TCAD Simulation /
300 ## - PHYSICAL DESCRIPTION
Number of Pages XVIII, 140 p.
490 1# - SERIES STATEMENT
Series statement Springer Series in Advanced Microelectronics,
505 0# - FORMATTED CONTENTS NOTE
Remark 2 List of Abbreviations and Symbols -- 1 Introduction -- 2 S/D Junctions in Ge: experimental -- 3 TCAD Simulation and Modeling of Ion Implants in Germanium -- 4 Electrical TCAD Simulations and Modeling in Germanium -- 5 Investigation of Quantum Well Transistors for Scaled Technologies -- 6 Implant-Free Quantum Well FETs: Experimental investigation -- 7 Conclusions Future Work and Outlook -- Bibliography -- List of Publications.
520 ## - SUMMARY, ETC.
Summary, etc For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
700 1# - AUTHOR 2
Author 2 De Meyer, Kristin.
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-94-007-6340-1
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Dordrecht :
-- Springer Netherlands :
-- Imprint: Springer,
-- 2013.
336 ## -
-- text
-- txt
-- rdacontent
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-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Physics.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronic circuits.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Nanotechnology.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Optical materials.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronic materials.
650 14 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Physics.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronic Circuits and Devices.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Circuits and Systems.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Optical and Electronic Materials.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Nanotechnology and Microengineering.
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
-- 1437-0387 ;
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-- ZDB-2-ENG

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