Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System (Record no. 55082)
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000 -LEADER | |
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fixed length control field | 02883nam a22005535i 4500 |
001 - CONTROL NUMBER | |
control field | 978-4-431-54795-2 |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20200421111703.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 140128s2014 ja | s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
ISBN | 9784431547952 |
-- | 978-4-431-54795-2 |
082 04 - CLASSIFICATION NUMBER | |
Call Number | 620.5 |
100 1# - AUTHOR NAME | |
Author | Samukawa, Seiji. |
245 10 - TITLE STATEMENT | |
Title | Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System |
300 ## - PHYSICAL DESCRIPTION | |
Number of Pages | VIII, 40 p. 35 illus., 30 illus. in color. |
490 1# - SERIES STATEMENT | |
Series statement | SpringerBriefs in Applied Sciences and Technology, |
505 0# - FORMATTED CONTENTS NOTE | |
Remark 2 | Introduction -- On-wafer UV sensor and prediction of UV irradiation damage -- Prediction of Abnormal Etching Profiles in High-aspect-ratio Via/Hole Etching Using On-wafer Monitoring System -- Feature Profile Evolution in Plasma Processing Using Wireless On-wafer Monitoring System. |
520 ## - SUMMARY, ETC. | |
Summary, etc | This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described. |
856 40 - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | http://dx.doi.org/10.1007/978-4-431-54795-2 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | eBooks |
264 #1 - | |
-- | Tokyo : |
-- | Springer Japan : |
-- | Imprint: Springer, |
-- | 2014. |
336 ## - | |
-- | text |
-- | txt |
-- | rdacontent |
337 ## - | |
-- | computer |
-- | c |
-- | rdamedia |
338 ## - | |
-- | online resource |
-- | cr |
-- | rdacarrier |
347 ## - | |
-- | text file |
-- | |
-- | rda |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Engineering. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Plasma (Ionized gases). |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanoscale science. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanoscience. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanostructures. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Semiconductors. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanotechnology. |
650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Engineering. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanotechnology and Microengineering. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanoscale Science and Technology. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanotechnology. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Plasma Physics. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Semiconductors. |
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
-- | 2191-530X |
912 ## - | |
-- | ZDB-2-ENG |
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