Silicon germanium : (Record no. 59275)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 05772nam a2200961 i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 5201823 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20200421114109.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 040320s2004 njua ob 001 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9780471667209 |
| -- | electronic |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | paper |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | electronic |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.39/732 |
| 100 1# - AUTHOR NAME | |
| Author | Singh, Raminderpal, |
| 245 10 - TITLE STATEMENT | |
| Title | Silicon germanium : |
| Sub Title | technology, modeling, and design / |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 PDF (xxviii, 340 pages) : |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Contributors. -- Foreword. -- Preface. -- Acknowledgments. -- Introduction. -- A Historical Perspective at IBM. -- Technology Development. -- Modeling and Characterization. -- Design Automation and Signal Integrity. -- Leading-Edge Applications. -- Appendix. -- Index. -- About the Authors. -- |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Oprysko, Modest Michael, |
| 700 1# - AUTHOR 2 | |
| Author 2 | Harame, David Louis. |
| 856 42 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | http://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5201823 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Piscataway, New Jersey : |
| -- | IEEE Press, |
| -- | 2004. |
| 264 #2 - | |
| -- | [Piscataqay, New Jersey] : |
| -- | IEEE Xplore, |
| -- | [2004] |
| 336 ## - | |
| -- | text |
| -- | rdacontent |
| 337 ## - | |
| -- | electronic |
| -- | isbdmedia |
| 338 ## - | |
| -- | online resource |
| -- | rdacarrier |
| 588 ## - | |
| -- | Title from title screen (viewed Aug. 17, 2004). |
| 588 ## - | |
| -- | Description based on PDF viewed 12/21/2015. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Silicon. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Germanium. |
| 695 ## - | |
| -- | BiCMOS integrated circuits |
| 695 ## - | |
| -- | Biographies |
| 695 ## - | |
| -- | Boron |
| 695 ## - | |
| -- | CMOS integrated circuits |
| 695 ## - | |
| -- | CMOS technology |
| 695 ## - | |
| -- | Clocks |
| 695 ## - | |
| -- | Computational modeling |
| 695 ## - | |
| -- | Design automation |
| 695 ## - | |
| -- | Electrostatic discharge |
| 695 ## - | |
| -- | Epitaxial growth |
| 695 ## - | |
| -- | FETs |
| 695 ## - | |
| -- | Hafnium |
| 695 ## - | |
| -- | Heterojunction bipolar transistors |
| 695 ## - | |
| -- | Impurities |
| 695 ## - | |
| -- | Indexes |
| 695 ## - | |
| -- | Integrated circuit interconnections |
| 695 ## - | |
| -- | Integrated circuit modeling |
| 695 ## - | |
| -- | Jitter |
| 695 ## - | |
| -- | Layout |
| 695 ## - | |
| -- | Metals |
| 695 ## - | |
| -- | Performance evaluation |
| 695 ## - | |
| -- | Phase locked loops |
| 695 ## - | |
| -- | Predictive models |
| 695 ## - | |
| -- | Radio frequency |
| 695 ## - | |
| -- | Resistors |
| 695 ## - | |
| -- | SONET |
| 695 ## - | |
| -- | Semiconductor device modeling |
| 695 ## - | |
| -- | Semiconductor process modeling |
| 695 ## - | |
| -- | Silicon |
| 695 ## - | |
| -- | Silicon germanium |
| 695 ## - | |
| -- | Solid modeling |
| 695 ## - | |
| -- | Transistors |
| 695 ## - | |
| -- | Voltage-controlled oscillators |
No items available.