Compact MOSFET models for VLSI design / (Record no. 59668)

000 -LEADER
fixed length control field 05395nam a2200913 i 4500
001 - CONTROL NUMBER
control field 5681002
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200421114119.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 151221s2009 njua ob 001 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9780470823446
-- electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- cloth
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- cloth
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic
100 1# - AUTHOR NAME
Author Bhattacharyya, A. B.,
245 10 - TITLE STATEMENT
Title Compact MOSFET models for VLSI design /
300 ## - PHYSICAL DESCRIPTION
Number of Pages 1 PDF (xxiv, 432 pages) :
505 0# - FORMATTED CONTENTS NOTE
Remark 2 Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method.
520 ## - SUMMARY, ETC.
Summary, etc Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. . Adopts a unified approach to guide students through the confusing array of MOSFET models. Links MOS physics to device models to prepare practitioners for real-world design activities. Helps fabless designers bridge the gap with off-site foundries. Features rich coverage of: . quantum mechanical related phenomena. Si-Ge strained-Silicon substrate. non-classical structures such as Double Gate MOSFETs . Presents topics that will prepare readers for long-term developments in the field. Includes solutions in every chapter. Can be tailored for use among students and professionals of many levels. Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner's reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: <a href="http://www.wiley.com/go/bhattacharyya">www.wiley.com/go/bhattacharyya</a>.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
General subdivision Very large scale integration
-- Design and construction.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
General subdivision Design and construction.
856 42 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5681002
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Singapore ;
-- John Wiley & Sons (Asia),
-- c2009.
264 #2 -
-- [Piscataqay, New Jersey] :
-- IEEE Xplore,
-- [2009]
336 ## -
-- text
-- rdacontent
337 ## -
-- electronic
-- isbdmedia
338 ## -
-- online resource
-- rdacarrier
588 ## -
-- Description based on PDF viewed 12/21/2015.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Integrated circuits
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Metal oxide semiconductor field-effect transistors
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-- CMOS integrated circuits
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-- Conductivity
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-- Crystals
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-- Dielectrics
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-- Differential equations
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-- Doping
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-- Electric potential
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-- Ellipsoids
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-- Energy states
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-- Equations
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-- Guidelines
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-- Indexes
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-- Integrated circuit modeling
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-- Interpolation
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-- Logic gates
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-- MOS capacitors
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-- MOSFET circuits
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-- MOSFETs
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-- Mathematical model
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-- Mobile communication
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-- Noise
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-- Numerical models
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-- Periodic structures
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-- Semiconductor process modeling
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-- Silicon
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-- Silicon on insulator technology
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-- Space charge
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-- Spline
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-- Substrates
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-- Threshold voltage
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-- Transient analysis
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-- Very large scale integration

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