Handbook of GaN semiconductor materials and devices / (Record no. 70479)

000 -LEADER
fixed length control field 04662cam a2200553Mi 4500
001 - CONTROL NUMBER
control field 9781498747141
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220711212138.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 171026s2017 flu obf 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781351648059
-- (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 1351648055
-- (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- (hardback ;
-- alk. paper)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- (hardback ;
-- alk. paper)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781315152011
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 1315152010
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781498747141
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 1498747140
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781351638524
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 1351638521
082 04 - CLASSIFICATION NUMBER
Call Number 621.3815/2
245 00 - TITLE STATEMENT
Title Handbook of GaN semiconductor materials and devices /
300 ## - PHYSICAL DESCRIPTION
Number of Pages 1 online resource.
490 0# - SERIES STATEMENT
Series statement Series in optics and optoelectronics
505 0# - FORMATTED CONTENTS NOTE
Remark 2 ""Cover""; ""Half Title ""; ""Title Page ""; ""Copyright Page ""; ""Table of Contents ""; ""Series Preface ""; ""Foreword ""; ""Preface ""; ""Editors ""; ""Contributors ""; ""Section I: Fundamentals ""; ""1: III-Nitride Materials and Characterization ""
505 8# - FORMATTED CONTENTS NOTE
Remark 2 ""2: Microstructure and Polarization Properties of III-Nitride Semiconductors """"3: Optical Properties of III-Nitride Semiconductors ""; ""4: Electronic and Transport Properties of III-Nitride Semiconductors ""; ""Section II: Growth and Processing ""
505 8# - FORMATTED CONTENTS NOTE
Remark 2 ""5: Growth Technology for GaN and AlN Bulk Substrates and Templates """"6: III-Nitride Metalorganic Vapor-Phase Epitaxy ""; ""7: Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications ""; ""8: Advanced Optoelectronic Device Processing ""
505 8# - FORMATTED CONTENTS NOTE
Remark 2 ""Section III: Power Electronics """"9: Principles and Properties of Nitride-Based Electronic Devices ""; ""10: Power Conversion and the Role of GaN ""; ""11: Recent Progress in GaN-on-Si HEMT ""; ""12: Reliability in III-Nitride Devices ""; ""Section IV: Light Emitters ""
505 8# - FORMATTED CONTENTS NOTE
Remark 2 ""13: Internal Quantum Efficiency for III-Nitrideâ#x80;#x93;Based Blue Light-Emitting Diodes """"14: White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends ""; ""15: Current Status and Trends for Green Light-Emitting Diodes ""
520 2# - SUMMARY, ETC.
Summary, etc "This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.Bo Shen is the Cheung Kong Professor at Peking University in China. "--Provided by publisher.
700 1# - AUTHOR 2
Author 2 Bi, Wengang,
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://www.taylorfrancis.com/books/9781498747141
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://www.taylorfrancis.com/books/9781315152011
856 42 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Boca Raton :
-- Taylor & Francis, CRC Press,
-- 2017.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
588 ## -
-- OCLC-licensed vendor bibliographic record.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Gallium nitride
938 ## -
-- Taylor & Francis
-- TAFR
-- 9781315152011

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