Semiconductor material and device characterization / (Record no. 73794)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 06346nam a2201213 i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 5237928 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20220712205618.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 151221s2006 njua ob 001 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9780471749097 |
| -- | electronic |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | electronic |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.3815/2 |
| 100 1# - AUTHOR NAME | |
| Author | Schroder, Dieter K., |
| 245 10 - TITLE STATEMENT | |
| Title | Semiconductor material and device characterization / |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 3rd ed. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 PDF (xv, 779 pages) : |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Resistivity -- Carrier and doping density -- Contact resistance and Schottky barriers -- Series resistance, channel length and width, and threshold voltage -- Defects -- Oxide and interface trapped charges, oxide thickness -- Carrier lifetimes -- Mobility -- Charge-based and probe characterization -- Optical characterization -- Chemical and physical characterization -- Reliability and failure analysis. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: . Updated and revised figures and examples reflecting the most current data and information. 260 new references offering access to the latest research and discussions in specialized topics. New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: . Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| Subject | Semiconductors. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| Subject | Semiconductors |
| General subdivision | Testing. |
| 856 42 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5237928 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | [Piscataway, New Jersey] : |
| -- | IEEE Press, |
| -- | c2006. |
| 264 #2 - | |
| -- | [Piscataqay, New Jersey] : |
| -- | IEEE Xplore, |
| -- | [2006] |
| 336 ## - | |
| -- | text |
| -- | rdacontent |
| 337 ## - | |
| -- | electronic |
| -- | isbdmedia |
| 338 ## - | |
| -- | online resource |
| -- | rdacarrier |
| 588 ## - | |
| -- | Description based on PDF viewed 12/21/2015. |
| 695 ## - | |
| -- | Acceleration |
| 695 ## - | |
| -- | Adaptive optics |
| 695 ## - | |
| -- | Bismuth |
| 695 ## - | |
| -- | Capacitance |
| 695 ## - | |
| -- | Capacitance-voltage characteristics |
| 695 ## - | |
| -- | Cathode ray tubes |
| 695 ## - | |
| -- | Charge carrier density |
| 695 ## - | |
| -- | Charge carrier processes |
| 695 ## - | |
| -- | Charge measurement |
| 695 ## - | |
| -- | Conductivity |
| 695 ## - | |
| -- | Contact resistance |
| 695 ## - | |
| -- | Contamination |
| 695 ## - | |
| -- | Current measurement |
| 695 ## - | |
| -- | Density measurement |
| 695 ## - | |
| -- | Doping |
| 695 ## - | |
| -- | Electric potential |
| 695 ## - | |
| -- | Electron beams |
| 695 ## - | |
| -- | Electron emission |
| 695 ## - | |
| -- | Electron traps |
| 695 ## - | |
| -- | Equations |
| 695 ## - | |
| -- | Hall effect |
| 695 ## - | |
| -- | Image resolution |
| 695 ## - | |
| -- | Impurities |
| 695 ## - | |
| -- | Indexes |
| 695 ## - | |
| -- | Junctions |
| 695 ## - | |
| -- | Kelvin |
| 695 ## - | |
| -- | Lifetime estimation |
| 695 ## - | |
| -- | Logic gates |
| 695 ## - | |
| -- | Magnetic semiconductors |
| 695 ## - | |
| -- | Materials |
| 695 ## - | |
| -- | Metals |
| 695 ## - | |
| -- | Microscopy |
| 695 ## - | |
| -- | Ohmic contacts |
| 695 ## - | |
| -- | Optical imaging |
| 695 ## - | |
| -- | Optical microscopy |
| 695 ## - | |
| -- | Optical polarization |
| 695 ## - | |
| -- | Optical reflection |
| 695 ## - | |
| -- | Oxidation |
| 695 ## - | |
| -- | Photonic band gap |
| 695 ## - | |
| -- | Pollution measurement |
| 695 ## - | |
| -- | Probes |
| 695 ## - | |
| -- | Radiative recombination |
| 695 ## - | |
| -- | Reliability |
| 695 ## - | |
| -- | Resistance |
| 695 ## - | |
| -- | Scanning electron microscopy |
| 695 ## - | |
| -- | Scattering |
| 695 ## - | |
| -- | Schottky diodes |
| 695 ## - | |
| -- | Semiconductor device measurement |
| 695 ## - | |
| -- | Silicon |
| 695 ## - | |
| -- | Stress |
| 695 ## - | |
| -- | Surface treatment |
| 695 ## - | |
| -- | Symbols |
| 695 ## - | |
| -- | Temperature measurement |
| 695 ## - | |
| -- | Terminology |
| 695 ## - | |
| -- | Thermionic emission |
| 695 ## - | |
| -- | Threshold voltage |
| 695 ## - | |
| -- | Transmission electron microscopy |
| 695 ## - | |
| -- | Tunneling |
| 695 ## - | |
| -- | Voltage measurement |
No items available.