Complete guide to semiconductor devices / (Record no. 73972)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 12546nam a2202737 i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 5271197 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20220712205711.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 151221s2010 njua ob 001 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9780470547205 |
| -- | electronic |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | electronic |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.3815/2 |
| 100 1# - AUTHOR NAME | |
| Author | Ng, Kwok Kwok, |
| 245 10 - TITLE STATEMENT | |
| Title | Complete guide to semiconductor devices / |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 2nd ed. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 PDF (xxii, 740 pages) : |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Preface. Preface to the First Edition. Introduction. DIODES I: RECTIFIERS. p-n Junction Diode. p-i-n Diode. Schottky-Barrier Diode. Planar-Doped-Barrier (PDB) Diode. Isotype Heterojunction. DIODES II: NEGATIVE RESISTANCE N-SHAPED. Tunnel Diode. Transferred-Electron Device (TED). Resonant-Tunneling Diode. Resonant-Interband-Tunneling (RIT) Diode. Single-Barrier Tunnel Diode. Single-Barrier Tunnel Diode. Single-Barrier Interband-Tunneling Diode. Real-Space-Transfer (RST) Diode. DIODES III: NEGATIVE RESISTANCE S-SHAPED. Metal-Insulator-Semiconductor Switch (MISS). Planar-Doped-Barrier (PDB) Switch. Amorphous Threshold Switch. Heterostructure Hot-Electron Diode (HHED). DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME. Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode. Barrier-Injection Transit-Time (BARITT) Diode. RESISTIVE AND CAPACITIVE DEVICES. Resistor. Metal-Oxide-Semiconductor (MOS) Capacitor. Charge-Coupled Device (CCD). TRANSISTORS I: FIELD-EFFECT. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Junction Field-Effect Transistor (JFET). Metal-Semiconductor Field-Effect Transistor (MESFET). Modulation-Doped Field-Effect Transistor (MODFET). Permeable-Base Transistor. Static-Induction Transistor (SIT). Real-Space-Transfer (RST) Transistor. Planar-Doped Field-Effect Transistor. Surface-Tunnel Transistor. Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET). Stark-Effect Transistor. Velocity-Modulation Transistor (VMT). TRANSISTOR II: POTENTIAL-EFFECT. Bipolar Transistor. Tunneling Hot-Electron-Transfer Amplifier (THETA). Metal-Base Transistor. Bipolar Inversion-Channel Field-Effect Transistor (BICFET). Tunnel-Emitter Transistor (TETRAN). Planar-Doped-Barrier (PDB) Transistor. Heterojunction Hot-Electron Transistor (HHET). Induced-Base Transistor. Resonant-Tunneling Bipolar Transistor (RTBT/RBT). Resonant-Tunneling Hot-Electron Transistor (RHET). Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT). Spin-Valve Transistor. NONVOLATILE MEMORIES. Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor. Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor. THYRISTORS AND POWER DEVICES. Silicon-Controlled Rectifier (SCR). Insulated-Gate Bipolar Transistor (IGBT). Static-Induction Thyristor (SIThy). Unijunction Transistor. PHOTONICS I: LIGHT SOURCES. Light-Emitting Diode (LED). Injection Laser. PHOTONICS II: PHOTODETECTORS. Photoconductor. p-i-n Photodiode. Schottky-Barrier Photodiode. Charge-Coupled Image Sensor (CCIS). Avalanche Photodiode (APD). Phototransistor. Metal-Smiconductor-Metal (MSM) Photodetector. Quantum-Well Infrared Photodetector (QWIP). Quantum-Dot Infrared Photodetector (QDIP). Blocked-Impurity-Band (BIB) Photodetector. Negative-Electron-Affinity (NEA) Photocathode. Photon-Drag Detector. PHOTONICS III: BISTABLE OPTICAL DEVICES. Self-Electrooptic-Effect Device (SEED). Bistable Etalon. PHOTONICS IV: OTHER DEVICES. Solar Cell. Electroabsorption Modulator. Thermistor. Hall Plate. Strain Gauge (Gage). Interdigital Transducer (IDT). Ion-Sensitive Field-Effect Transistor (ISFET). Appendix A: Selected Nonsemiconductor Devices. Appendix B: Physical Phenomena. Appendix C: General Applications of Device Groups. Appendix D: Physical Properties. Appendix E: Background Information. Index. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | A definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are being continually invented. As a result, a large number of types and variations of devices are available in the literature. The Second Edition of this unique engineering guide continues to be the only available complete collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. As in the First Edition, the value of this text lies in its comprehensive, yet highly readable presentation and its easy-to-use format, making it suitable for a wide range of audiences. . Essential information is presented for a quick, balanced overview. Each chapter is designed to cover only one specific device, for easy and focused reference. Each device is discussed in detail, always including its history, its structure, its characteristics, and its applications The Second Edition has been significantly updated with eight new chapters, and the material rearranged to reflect recent developments in the field. As such, it remains an ideal reference source for graduate students who want a quick survey of the field, as well as for practitioners and researchers who need quick access to basic information, and a valuable pragmatic handbook for salespeople, lawyers, and anyone associated with the semiconductor industry. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| Subject | Semiconductors |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| Subject | Semiconductors |
| General subdivision | History. |
| 856 42 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5271197 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | [United States?] : |
| -- | IEEE Press, |
| -- | c2002. |
| 264 #2 - | |
| -- | [Piscataqay, New Jersey] : |
| -- | IEEE Xplore, |
| -- | [2010] |
| 336 ## - | |
| -- | text |
| -- | rdacontent |
| 337 ## - | |
| -- | electronic |
| -- | isbdmedia |
| 338 ## - | |
| -- | online resource |
| -- | rdacarrier |
| 588 ## - | |
| -- | Description based on PDF viewed 12/21/2015. |
| 695 ## - | |
| -- | Nonhomogeneous media |
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| -- | Nonvolatile memory |
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| -- | Optical bistability |
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| -- | Optical devices |
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| -- | Optical feedback |
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| -- | Optical fibers |
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| -- | Optical modulation |
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| -- | Optical reflection |
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| -- | Optical refraction |
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| -- | Optical surface waves |
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| -- | Optical switches |
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| -- | Optical variables control |
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| -- | Oscillators |
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| -- | Oxidation |
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| -- | P-i-n diodes |
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| -- | P-n junctions |
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| -- | PIN photodiodes |
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| -- | Patents |
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| -- | Periodic structures |
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| -- | Phonons |
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| -- | Photoconducting materials |
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| -- | Photoconductivity |
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| -- | Photodetectors |
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| -- | Photodiodes |
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| -- | Photoelectricity |
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| -- | Photonics |
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| -- | Phototransistors |
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| -- | Photovoltaic cells |
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| -- | Piezoelectric devices |
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| -- | Pixel |
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| -- | Programming |
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| -- | Quantum capacitance |
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| -- | Quantum dots |
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| -- | Quantum well devices |
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| -- | Quantum wells |
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| -- | Radiation effects |
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| -- | Radiative recombination |
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| -- | Radio frequency |
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| -- | Rectifiers |
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| -- | Reflection |
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| -- | Registers |
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| -- | Resistance |
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| -- | Resonant tunneling devices |
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| -- | SQUIDs |
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| -- | Satellites |
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| -- | Scattering |
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| -- | Schottky diodes |
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| -- | Semiconductor device measurement |
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| -- | Semiconductor diodes |
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| -- | Semiconductor lasers |
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| -- | Semiconductor waveguides |
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| -- | Sensors |
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| -- | Silicides |
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| -- | Silicon |
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| -- | Solids |
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| -- | Spin valves |
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| -- | Spontaneous emission |
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| -- | Stimulated emission |
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| -- | Strain |
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| -- | Strain measurement |
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| -- | Substrates |
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| -- | Superlattices |
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| -- | Surface acoustic wave devices |
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| -- | Surface acoustic waves |
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| -- | Surface treatment |
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| -- | Switches |
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| -- | Temperature |
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| -- | Temperature dependence |
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| -- | Temperature distribution |
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| -- | Temperature measurement |
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| -- | Temperature sensors |
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| -- | Thermal conductivity |
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| -- | Thermal expansion |
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| -- | Thermal resistance |
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| -- | Thermionic emission |
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| -- | Thermistors |
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| -- | Threshold current |
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| -- | Threshold voltage |
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| -- | Thyristors |
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| -- | Transconductance |
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| -- | Transducers |
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| -- | Transistors |
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| -- | Tunneling |
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| -- | Varistors |
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| -- | Voltage control |
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| -- | Wire |
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| -- | Absorption |
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| -- | Acoustic waves |
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| -- | Aluminum |
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| -- | Amorphous silicon |
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| -- | Amplitude modulation |
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| -- | Anodes |
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| -- | Approximation methods |
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| -- | Arrays |
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| -- | Avalanche breakdown |
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| -- | Avalanche photodiodes |
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| -- | Bipolar transistors |
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| -- | Bolometers |
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| -- | Cameras |
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| -- | Capacitance |
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| -- | Capacitors |
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| -- | Cathodes |
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| -- | Ceramics |
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| -- | Charge carrier processes |
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| -- | Charge coupled devices |
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| -- | Charge transfer |
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| -- | Conductivity |
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| -- | Crystals |
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| -- | Dark current |
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| -- | Delay |
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| -- | Detectors |
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| -- | Dielectrics |
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| -- | Doping |
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| -- | Doping profiles |
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| -- | EPROM |
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| -- | Electric fields |
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| -- | Electric potential |
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| -- | Electrodes |
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| -- | Electroluminescence |
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| -- | Electromagnetic spectrum |
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| -- | Electron mobility |
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| -- | Electron traps |
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| -- | Electron tubes |
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| -- | Epitaxial growth |
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| -- | Epitaxial layers |
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| -- | Equations |
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| -- | FETs |
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| -- | Films |
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| -- | Fingers |
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| -- | Frequency modulation |
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| -- | Gallium arsenide |
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| -- | Gas lasers |
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| -- | Germanium |
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| -- | Glow discharges |
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| -- | Gratings |
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| -- | HEMTs |
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| -- | Heat sinks |
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| -- | Heat transfer |
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| -- | Heterojunctions |
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| -- | High temperature superconductors |
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| -- | History |
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| -- | Image sensors |
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| -- | Impurities |
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| -- | Indexes |
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| -- | Indium gallium arsenide |
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| -- | Insulated gate bipolar transistors |
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| -- | Insulators |
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| -- | Integrated optics |
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| -- | Ionization |
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| -- | Ions |
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| -- | JFETs |
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| -- | Junctions |
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| -- | Laser modes |
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| -- | Laser theory |
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| -- | Lattices |
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| -- | Light emitting diodes |
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| -- | Linearity |
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| -- | Lithography |
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| -- | Logic gates |
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| -- | MESFETs |
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| -- | MOCVD |
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| -- | MODFETs |
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| -- | MOS capacitors |
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| -- | MOSFET circuits |
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| -- | Magnetic field measurement |
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| -- | Magnetic fields |
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| -- | Magnetic tunneling |
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| -- | Magnetization |
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| -- | Magnetomechanical effects |
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| -- | Magnetometers |
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| -- | Magnetoresistance |
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| -- | Magnetoresistive devices |
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| -- | Masers |
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| -- | Materials |
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| -- | Metals |
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| -- | Microwave circuits |
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| -- | Microwave devices |
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| -- | Microwave filters |
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| -- | Microwave oscillators |
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| -- | Mixers |
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| -- | Modulation |
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| -- | Molecular beam epitaxial growth |
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| -- | Moment methods |
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| -- | Monte Carlo methods |
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| -- | Neodymium |
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| -- | Noise |
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