Device Physics, Modeling, Technology, and Analysis for Silicon MESFET (Record no. 75309)
[ view plain ]
000 -LEADER | |
---|---|
fixed length control field | 03334nam a22005055i 4500 |
001 - CONTROL NUMBER | |
control field | 978-3-030-04513-5 |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20220801213539.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 181213s2019 sz | s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
ISBN | 9783030045135 |
-- | 978-3-030-04513-5 |
082 04 - CLASSIFICATION NUMBER | |
Call Number | 621.3815 |
100 1# - AUTHOR NAME | |
Author | Amiri, Iraj Sadegh. |
245 10 - TITLE STATEMENT | |
Title | Device Physics, Modeling, Technology, and Analysis for Silicon MESFET |
250 ## - EDITION STATEMENT | |
Edition statement | 1st ed. 2019. |
300 ## - PHYSICAL DESCRIPTION | |
Number of Pages | IX, 122 p. 51 illus., 27 illus. in color. |
505 0# - FORMATTED CONTENTS NOTE | |
Remark 2 | Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs). |
520 ## - SUMMARY, ETC. | |
Summary, etc | This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs. |
700 1# - AUTHOR 2 | |
Author 2 | Mohammadi, Hossein. |
700 1# - AUTHOR 2 | |
Author 2 | Hosseinghadiry, Mahdiar. |
856 40 - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | https://doi.org/10.1007/978-3-030-04513-5 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | eBooks |
264 #1 - | |
-- | Cham : |
-- | Springer International Publishing : |
-- | Imprint: Springer, |
-- | 2019. |
336 ## - | |
-- | text |
-- | txt |
-- | rdacontent |
337 ## - | |
-- | computer |
-- | c |
-- | rdamedia |
338 ## - | |
-- | online resource |
-- | cr |
-- | rdacarrier |
347 ## - | |
-- | text file |
-- | |
-- | rda |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Electronic circuits. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Electronics. |
650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Electronic Circuits and Systems. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Electronics and Microelectronics, Instrumentation. |
912 ## - | |
-- | ZDB-2-ENG |
912 ## - | |
-- | ZDB-2-SXE |
No items available.