Silicon Nanowire Transistors (Record no. 79211)
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000 -LEADER | |
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fixed length control field | 03398nam a22005055i 4500 |
001 - CONTROL NUMBER | |
control field | 978-3-319-27177-4 |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20220801221028.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 160223s2016 sz | s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
ISBN | 9783319271774 |
-- | 978-3-319-27177-4 |
082 04 - CLASSIFICATION NUMBER | |
Call Number | 621.3815 |
100 1# - AUTHOR NAME | |
Author | Bindal, Ahmet. |
245 10 - TITLE STATEMENT | |
Title | Silicon Nanowire Transistors |
250 ## - EDITION STATEMENT | |
Edition statement | 1st ed. 2016. |
300 ## - PHYSICAL DESCRIPTION | |
Number of Pages | XIV, 165 p. 145 illus., 5 illus. in color. |
505 0# - FORMATTED CONTENTS NOTE | |
Remark 2 | Dual Work Function Silicon Nanowire MOS Transistors -- Single Work Function Silicon Nanowire MOS Transistors -- Spice Modeling For Analog and Digital Applications -- High-Speed Analog Applications -- Radio Frequency (RF) Applications -- SRAM Mega Cell Design for Digital Applications -- Field-Programmable-Gate-Array (FPGA) -- Integrate-And-Fire Spiking (IFS) Neuron -- Direct Sequence Spread Spectrum (DSSS) Base-Band Transmitter.-. |
520 ## - SUMMARY, ETC. | |
Summary, etc | This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types of memory on the same chip, such as capacitive cells and transistors with floating gates that can be used as DRAMs and Flash memories. |
700 1# - AUTHOR 2 | |
Author 2 | Hamedi-Hagh, Sotoudeh. |
856 40 - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | https://doi.org/10.1007/978-3-319-27177-4 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | eBooks |
264 #1 - | |
-- | Cham : |
-- | Springer International Publishing : |
-- | Imprint: Springer, |
-- | 2016. |
336 ## - | |
-- | text |
-- | txt |
-- | rdacontent |
337 ## - | |
-- | computer |
-- | c |
-- | rdamedia |
338 ## - | |
-- | online resource |
-- | cr |
-- | rdacarrier |
347 ## - | |
-- | text file |
-- | |
-- | rda |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Electronic circuits. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanotechnology. |
650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Electronic Circuits and Systems. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Nanotechnology. |
912 ## - | |
-- | ZDB-2-ENG |
912 ## - | |
-- | ZDB-2-SXE |
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