Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (Record no. 81083)
[ view plain ]
| 000 -LEADER | |
|---|---|
| fixed length control field | 03684nam a22005295i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 978-981-10-5290-3 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20220801222724.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 170906s2018 si | s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9789811052903 |
| -- | 978-981-10-5290-3 |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.3815 |
| 100 1# - AUTHOR NAME | |
| Author | Adhikary, Sourav. |
| 245 10 - TITLE STATEMENT | |
| Title | Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors |
| Sub Title | From Materials to Devices / |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 1st ed. 2018. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | XIII, 63 p. 35 illus., 16 illus. in color. |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Chapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Chakrabarti, Subhananda. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://doi.org/10.1007/978-981-10-5290-3 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Singapore : |
| -- | Springer Nature Singapore : |
| -- | Imprint: Springer, |
| -- | 2018. |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 347 ## - | |
| -- | text file |
| -- | |
| -- | rda |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic circuits. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Lasers. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Signal processing. |
| 650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic Circuits and Systems. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Laser. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Signal, Speech and Image Processing . |
| 912 ## - | |
| -- | ZDB-2-ENG |
| 912 ## - | |
| -- | ZDB-2-SXE |
No items available.