Handbook of silicon based mems materials and technologies / (Record no. 82431)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 04920cam a2200577 i 4500 |
| 001 - CONTROL NUMBER | |
| control field | on1152528047 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | OCoLC |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20230516165850.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS | |
| fixed length control field | m o d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr cnu---unuuu |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 200429s2020 ne o 001 0 eng d |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | OPELS |
| Language of cataloging | eng |
| Description conventions | rda |
| -- | pn |
| Transcribing agency | OPELS |
| Modifying agency | EBLCP |
| -- | OCLCF |
| -- | UKAHL |
| -- | UKMGB |
| -- | OCLCQ |
| -- | OCLCO |
| -- | COM |
| -- | OCLCQ |
| 015 ## - NATIONAL BIBLIOGRAPHY NUMBER | |
| National bibliography number | GBC048794 |
| Source | bnb |
| 016 7# - NATIONAL BIBLIOGRAPHIC AGENCY CONTROL NUMBER | |
| Record control number | 019759468 |
| Source | Uk |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9780128177877 |
| Qualifying information | (ePub ebook) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 012817787X |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Canceled/invalid ISBN | 9780128177860 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Canceled/invalid ISBN | 0128177861 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (OCoLC)1152528047 |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TK7875 |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 621.381 |
| Edition number | 23 |
| 245 00 - TITLE STATEMENT | |
| Title | Handbook of silicon based mems materials and technologies / |
| Statement of responsibility, etc. | edited by Markku Tilli [and five others]. |
| 250 ## - EDITION STATEMENT | |
| Edition statement | Third edition. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Place of production, publication, distribution, manufacture | Amsterdam : |
| Name of producer, publisher, distributor, manufacturer | Elsevier, |
| Date of production, publication, distribution, manufacture, or copyright notice | 2020. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1 online resource |
| 336 ## - CONTENT TYPE | |
| Content type term | text |
| Content type code | txt |
| Source | rdacontent |
| 337 ## - MEDIA TYPE | |
| Media type term | computer |
| Media type code | c |
| Source | rdamedia |
| 338 ## - CARRIER TYPE | |
| Carrier type term | online resource |
| Carrier type code | cr |
| Source | rdacarrier |
| 490 1# - SERIES STATEMENT | |
| Series statement | Micro and nano technologies series |
| 500 ## - GENERAL NOTE | |
| General note | Includes index. |
| 588 0# - SOURCE OF DESCRIPTION NOTE | |
| Source of description note | Print version record. |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Front Cover -- Handbook of Silicon Based MEMS Materials and Technologies -- Copyright Page -- Contents -- List of contributors -- Preface -- Where is silicon based MEMS heading to? -- References -- I. Silicon as MEMS Material -- 1 Properties of silicon -- 1.1 Properties of silicon -- 1.1.1 Crystallography of silicon -- 1.1.1.1 Miller index (hkl) system -- 1.1.1.2 Stereographic projection -- 1.1.2 Defects in silicon lattice -- 1.1.3 Mechanical properties of silicon -- 1.1.4 Electrical properties -- 1.1.4.1 Introduction-dopants and impurities in silicon |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 1.1.4.2 Piezoresistive effect in silicon -- General piezoresistive effect -- Strain -- Stress in anisotropic materials -- Strain effect on resistivity -- Linearity -- Effect of temperature and doping -- Example of a piezoresistive sensor design -- Surface effects -- References -- 2 Czochralski growth of silicon crystals -- 2.1 The Czochralski crystal-growing furnace -- 2.1.1 Crucible -- 2.1.2 Hot zone materials -- 2.1.3 Hot zone structure -- 2.1.4 Gas flow -- 2.2 Stages of growth process -- 2.2.1 Melting -- 2.2.2 Neck -- 2.2.3 Crown -- 2.2.4 Body -- 2.2.5 Tail -- 2.2.6 Shut-off |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 2.3 Selected issues of crystal growth -- 2.3.1 Diameter control -- 2.3.2 Doping -- 2.3.3 Hot zone lifetime -- 2.4 Improved thermal and gas-flow designs -- 2.5 Heat transfer -- 2.6 Melt convection -- 2.6.1 Free convection -- 2.6.2 Crucible rotation -- 2.6.3 Crystal rotation -- 2.6.4 Marangoni convection and gas shear -- 2.7 Magnetic fields -- 2.7.1 Cusp field -- 2.7.2 Transverse field -- 2.7.3 Melt flows under transverse field -- 2.7.4 Time-dependent fields -- 2.8 Hot recharging and continuous feed -- 2.8.1 Hot recharging -- 2.8.2 Charge topping -- 2.8.3 Crucible modifications |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 2.8.4 Continuous Czochralski growth -- 2.9 Heavily n-type doped silicon and constitutional supercooling -- 2.9.1 Constitutional supercooling -- 2.9.2 Melting-point depression -- 2.9.3 Origin of dopant gradient in the melt -- 2.9.4 Path to lower resistivity -- 2.10 Growth of large diameter crystals -- 2.10.1 Neck growth for large crystals -- 2.10.2 Neck extension -- 2.10.3 Additional stresses on neck -- 2.10.4 Dislocations oriented in (100) direction in large diameter crystals -- 2.10.5 Crucible wall temperature -- 2.10.6 Double-layered crucible structure -- 2.10.7 Crucible deformations |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 2.10.8 Intentional devitrification -- 2.10.9 Transverse or cusp field for very large crystals -- 2.10.10 Boosting crystal weight -- 2.10.11 Seed chuck -- 2.10.12 Additional challenges -- References -- Further reading -- 3 Properties of silicon crystals -- 3.1 Dopants and impurities -- 3.2 Typical impurity concentrations -- 3.3 Concentration of dopants and impurities in axial direction -- 3.4 Resistivity -- 3.5 Radial variation of impurities and resistivity -- 3.6 Thermal donors -- 3.7 Defects in silicon crystals |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Microelectromechanical systems. |
| 9 (RLIN) | 6063 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Silicon. |
| 9 (RLIN) | 18548 |
| 650 #2 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Micro-Electrical-Mechanical Systems |
| Authority record control number or standard number | (DNLM)D055617 |
| 9 (RLIN) | 68705 |
| 650 #2 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Silicon |
| Authority record control number or standard number | (DNLM)D012825 |
| 9 (RLIN) | 18548 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Microsyst�emes �electrom�ecaniques. |
| Authority record control number or standard number | (CaQQLa)201-0327119 |
| 9 (RLIN) | 68706 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Silicium. |
| Authority record control number or standard number | (CaQQLa)201-0052755 |
| 9 (RLIN) | 68707 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | silicon. |
| Source of heading or term | aat |
| Authority record control number or standard number | (CStmoGRI)aat300011769 |
| 9 (RLIN) | 18548 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Microelectromechanical systems. |
| Source of heading or term | fast |
| Authority record control number or standard number | (OCoLC)fst01019745 |
| 9 (RLIN) | 6063 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Silicon. |
| Source of heading or term | fast |
| Authority record control number or standard number | (OCoLC)fst01118631 |
| 9 (RLIN) | 18548 |
| 700 1# - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Tilli, Markku, |
| Relator term | editor. |
| 9 (RLIN) | 68708 |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Relationship information | Print version: |
| Title | Handbook of silicon based mems materials and technologies. |
| Edition | Third edition. |
| Place, publisher, and date of publication | Amsterdam : Elsevier, 2020 |
| International Standard Book Number | 9780128177860 |
| Record control number | (OCoLC)1151986311 |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| Uniform title | Micro & nano technologies. |
| 9 (RLIN) | 68709 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Materials specified | ScienceDirect |
| Uniform Resource Identifier | <a href="https://www.sciencedirect.com/science/book/9780128177860">https://www.sciencedirect.com/science/book/9780128177860</a> |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
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