POROUS SILICON CARBIDE AND GALLIUM NITRIDE
By: FEENSTRA,R.M.
Material type:
BookPublisher: HOBOKEN Wiley 2008Description: xiv+318p.,23x15Cms.ISBN: 0470517529.DDC classification: 621.38152 F723
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| 621.38152 D97S Semiconductor Devices and Circuits | 621.38152 D97S Semiconductor Devices and Circuits | 621.38152 E49 THIN FILM TECHNOLOGY HANDBOOK | 621.38152 F723 POROUS SILICON CARBIDE AND GALLIUM NITRIDE | 621.38152 F891 THIN FILM MATERIALS:STRESS,DEFECT FORMATION &SURFACE EVOLUTION | 621.38152 G532 MODERN SEMICONDUCTOR FABRICATION TECHNOLOGY | 621.38152 G736 METAL IMPURITIES IN SILICON-DEVICE FABRICATION |
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