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Fundamentals of Nanoscaled Field Effect Transistors [electronic resource] / by Amit Chaudhry.

By: Chaudhry, Amit [author.].
Contributor(s): SpringerLink (Online service).
Material type: materialTypeLabelBookPublisher: New York, NY : Springer New York : Imprint: Springer, 2013Description: XIV, 201 p. 121 illus., 102 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9781461468226.Subject(s): Engineering | Nanoscale science | Nanoscience | Nanostructures | Electronic circuits | Electronics | Microelectronics | Optical materials | Electronic materials | Engineering | Electronics and Microelectronics, Instrumentation | Electronic Circuits and Devices | Circuits and Systems | Nanoscale Science and Technology | Optical and Electronic MaterialsAdditional physical formats: Printed edition:: No titleDDC classification: 621.381 Online resources: Click here to access online
Contents:
Scaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology.
In: Springer eBooksSummary: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-(Sm(B technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.
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Scaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology.

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-(Sm(B technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.

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