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Advanced indium arsenide-based HEMT architectures for terahertz applications / edited by N. Mohankumar.

Contributor(s): Mohankumar, N [editor.].
Material type: materialTypeLabelBookPublisher: Boca Raton, FL : CRC Press, 2022Copyright date: ©2022Edition: First edition.Description: 1 online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9781000454550; 100045455X; 9781000454567; 1000454568; 9781003093428; 1003093426.Subject(s): Modulation-doped field-effect transistors | Indium arsenide | Semiconductors | Terahertz technology | SCIENCE / Physics | TECHNOLOGY / Electricity | TECHNOLOGY / Electronics / Circuits / GeneralDDC classification: 621.3815/284 Online resources: Taylor & Francis | OCLC metadata license agreement
Contents:
Chapter 1: Introduction to III-V materials and HEMT Structure / Sanhita Manna -- Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications / D.Godwinraj -- Chapter 3: III-V Hetero Structure Devices for High Frequency Applications / R. Saravana Kumar -- Chapter 4: Overview of THz Applications / T. Nagarjuna -- Chapter 5: Device and Simulation Framework of InAs HEMTs / V. Mahesh -- Chapter 6: Single Gate (SG) InAs Based HEMTs Architecture for THz Applications / M. Arun Kumar -- Chapter 7: Effect of Gate Scaling and Composite Channel in InAs HEMTs / C. Kamalanathan -- Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications / R. Poorna Chandran -- Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs / Y. Vamshidhar -- Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) -- HEMT / Girish Shankar Mishra.
Summary: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
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Chapter 1: Introduction to III-V materials and HEMT Structure / Sanhita Manna -- Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications / D.Godwinraj -- Chapter 3: III-V Hetero Structure Devices for High Frequency Applications / R. Saravana Kumar -- Chapter 4: Overview of THz Applications / T. Nagarjuna -- Chapter 5: Device and Simulation Framework of InAs HEMTs / V. Mahesh -- Chapter 6: Single Gate (SG) InAs Based HEMTs Architecture for THz Applications / M. Arun Kumar -- Chapter 7: Effect of Gate Scaling and Composite Channel in InAs HEMTs / C. Kamalanathan -- Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications / R. Poorna Chandran -- Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs / Y. Vamshidhar -- Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) -- HEMT / Girish Shankar Mishra.

High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

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