Fundamentals of tunnel field-effect transistors / Sneh Saurabh, Indraprastha Institute of Information Technology, Delhi, India, Mamidala Jagadesh Kumar, Indian Institute of Technology, Delhi, India.
By: Saurabh, Sneh [author.]
.
Contributor(s): Kumar, Mamidala Jagadesh [author.].
Material type: 
BookPublisher: Boca Raton, Fla. : CRC Press, Taylor & Francis Group, [2017]Copyright date: ©2017Description: 1 online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9781315367354; 9781315331232; 9781498767163.Subject(s): Nanostructured materials | Tunnel field-effect transistors | Integrated circuits -- Design and construction | Low voltage integrated circuitsAdditional physical formats: Print version: : No titleDDC classification: 621.3815284 Online resources: Click here to view. 1. CMOS scaling -- 2. Quantum tunneling -- 3. Basics of tunnel field-effect transistor -- 4. Boosting ON-current in tunnel field-effect transistor -- 5. III-V tunnel field effect transistor -- 6. Carbon-based tunnel field-effect transistor -- 7. Nanowire tunnel field-effect transistor -- 8. Models for tunnel field-effect transistor -- 9. Applications of tunnel field-effect transistor -- 10. Future perspective.
During the last decade, there has been a great deal of interest in TFETs. To the best authors' knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator-- Provided by publisher.
There are no comments for this item.