"Version: 202112"--Title page verso.

Includes bibliographical references.

part I. Solid-state electronic devices. 1. Terahertz electromagnetic waves -- 1.1. What are terahertz waves? -- 1.2. The electromagnetic waves -- 1.3. Subdivisions of electromagnetic waves according to frequencies : the electromagnetic spectrum -- 1.4. Location of terahertz gap in the international standard band designations -- 1.5. Terahertz electronics -- 1.6. The practical perspective of electronics -- 1.7. Moving from conventional to terahertz electronics -- 1.8. Peculiarities of the terahertz gap -- 1.9. Unique advantages of terahertz gap frequencies -- 1.10. Organizational plan of the book -- 1.11. Discussion and conclusions

2. Schottky barrier, metal-insulator-metal, self-switching and geometric diodes -- 2.1. Schottky diode principle and switching action -- 2.2. Current-voltage equation of a non-ideal Schottky-barrier diode (SBD) -- 2.3. Components of the traditional equivalent circuit of a Schottky-barrier diode -- 2.4. Cut-off frequency of the circular-contact SBD -- 2.5. Consideration of skin effect for series resistance calculation -- 2.6. Range of applicability of traditional SBD model -- 2.7. Extended model of SBD -- 2.8. Schottky diodes with terahertz operational frequencies -- 2.9. Non-PN junction diodes -- 2.10. Discussion and conclusions

3. Resonant tunneling diodes -- 3.1. Resonant tunneling diode working and high-frequency capability -- 3.2. Simplest equivalent circuit model of resonant tunneling diode -- 3.3. Maximum output power conveyed to the load resistor RL -- 3.4. Small-signal transit-time equivalent circuit model of RTD -- 3.5. Physics-based small-signal equivalent circuit model -- 3.6. Terahertz resonant tunneling diodes -- 3.7. Discussion and conclusions

4. Avalanche transit-time and transferred-electron diodes -- 4.1. Mechanisms of creation of negative resistance -- 4.2. Frequency and power capabilities of IMPATT diode -- 4.3. Diode structure and dynamic negative resistance behavior -- 4.4. Terahertz GaAs IMPATT diodes -- 4.5. Transferred-electron diode -- 4.6. Physics of Gunn diode operation -- 4.7. Terahertz planar Gunn diodes -- 4.8. Discussion and conclusions

5. Heterojunction bipolar transistors -- 5.1. Capability of heterojunction bipolar transistor to work at high frequencies -- 5.2. Gain definitions -- 5.3. Frequency response of the common-emitter transistor amplifier -- 5.4. Figures of merit (FOMs) for high-frequency bipolar transistors -- 5.5. Correlation of terms in cut-off frequency equation with components of equivalent circuit of the bipolar transistor -- 5.6. DHBT IC technologies -- 5.7. Discussion and conclusions

6. Metal-oxide semiconductor field-effect transistors -- 6.1. MOSFET construction and operation -- 6.2. Short-circuit current gain -- 6.3. MOSFET capacitances -- 6.4. Cut-off frequency -- 6.5. Circumventing the MOSFET speed limitations due to long electron transit time -- 6.6. Terahertz MOSFET detectors -- 6.7. Discussion and conclusions

7. High-electron-mobility transistors -- 7.1. MESFET and HEMT basics -- 7.2. HEMT operation at high frequencies -- 7.3. Built-in potential and capacitances -- 7.4. Analysis of an HEMT structure -- 7.5. InP terahertz HEMT technology -- 7.6. Discussion and conclusions

part II. Vacuum electronic devices. 8. Travelling wave tubes and backward wave oscillators -- 8.1. General constructional features of TWTs and BWOs -- 8.2. Closer examination of working of TWT/BWO -- 8.3. Difference between a travelling wave tube and backward wave oscillator from phase/group velocity viewpoint -- 8.4. Electron bunching and amplification of the signal in a TWT -- 8.5. Applications of TWTs -- 8.6. Terahertz TWTs -- 8.7. Operation of the backward wave oscillator -- 8.8. Advantages of the backward wave oscillator -- 8.9. Limitations of the backward wave oscillator -- 8.10. Frequency/power levels achieved with backward wave oscillators -- 8.11. Discussion and conclusions

9. Gyrotrons -- 9.1. Difficulties faced with classical electron tubes in the terahertz range -- 9.2. Periodic beam devices versus periodic circuit devices -- 9.3. Advantages offered by gyrotron for terahertz generation -- 9.4. Components and constructional details of gyrotron -- 9.5. Cyclotron frequency -- 9.6. Cyclotron resonance maser (CRM) -- 9.7. Explanation of the bunching mechanism of a gyrotron with a simplified three-electron model -- 9.8. Dispersion diagram of a gyrotron -- 9.9. Gyrotron research status -- 9.10. Discussion and conclusions

10. Free electron lasers -- 10.1. Free electron laser versus conventional laser -- 10.2. Main components of a free electron laser -- 10.3. Equation of motion of the electron in the undulator -- 10.4. Operating modes of the free electron laser -- 10.5. Discussion and conclusions.

This research and reference text provides a comprehensive and authoritative survey of the state-of-the-art in terahertz electronics research. Covering the fundamentals, operational principles, and theoretical aspects of the field, the book equips the reader to take the practical steps involved in the fabrication of devices that work in the terahertz frequency range.

Researchers and professionals working with terahertz electronics and technologies.

Also available in print.

Mode of access: World Wide Web.

System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.

Vinod Kumar Khanna is an independent researcher at Chandigarh, India. He is a retired Chief Scientist from Council of Scientific & Industrial Research (CSIR)-Central Electronics Engineering Research Institute (CEERI), Pilani-India, and retired Professor from Academy of Scientific & Innovative Research (AcSIR), Ghaziabad, India.

Title from PDF title page (viewed on January 18, 2022).