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Chemical vapour deposition : growth processes on an atomic level / Karin Larsson.

By: Larsson, Karin, 1955- [author.].
Contributor(s): Institute of Physics (Great Britain) [publisher.].
Material type: materialTypeLabelBookSeries: IOP (Series)Release 22: ; IOP ebooks2022 collection: Publisher: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2022]Description: 1 online resource (various pagings) : illustrations (some color).Content type: text Media type: electronic Carrier type: online resourceISBN: 9780750331074; 9780750331067.Subject(s): Chemical vapor deposition | Surface chemistry & adsorption | TECHNOLOGY & ENGINEERING / Materials Science / Thin Films, Surfaces & InterfacesAdditional physical formats: Print version:: No titleDDC classification: 671.735 Online resources: Click here to access online Also available in print.
Contents:
1. Introduction -- 1.1. Chemical vapour phase deposition -- 1.2. Overview of thin film characterization techniques -- 1.3. Theoretical modelling and simulations
2. Common CVD reactor setups -- 2.1. General -- 2.2. Classification of CVD reactors
3. CVD processes on an atomic level -- 3.1. Introduction -- 3.2. Chemical reactions in the substrate/thin film interface -- 3.3. Chemical reactions in the thin film/gas interface
4. Theoretical methods and methodologies -- 4.1. General -- 4.2. The Schr�odinger equation -- 4.3. The density functional theory method -- 4.4. Geometry optimizations -- 4.5. Transition state search -- 4.6. Process energies -- 4.7. Property analysis methods
5. Construction of solid surface models -- 5.1. Surfaces within materials science of today -- 5.2. Surface reactivities -- 5.3. Surface planes -- 5.4. Surface morphologies -- 5.5. Surface relaxation -- 5.6. Surface reconstruction -- 5.7. Construction of model surfaces for CVD simulations
6. Thermodynamic modelling of CVD growth processes -- 6.1. General -- 6.2. Stability of non-terminated surfaces -- 6.3. Surface termination -- 6.4. Creation of surface reactive sites -- 6.5. Adsorption of growth species -- 6.6. Identification of the rate-limiting step in the CVD growth of diamond -- 6.7. Influence of dopants on the growth process
7. Identification of growth mechanisms for ALD deposition of Cu -- 7.1. General -- 7.2. Test-calculations -- 7.3. Adsorption of Cu-containing growth species -- 7.4. Disproportionation of the copper(I)chloride molecule -- 7.5. Removal of Cl from the CuCl adsorbate -- 7.6. Reaction barriers
8. Prerequisites for vapour phase growth of phase pure cubic BN -- 8.1. Energetical vapour phase deposition -- 8.2. Gentle chemical vapour phase deposition -- 8.3. Termination of the c-BN surface -- 8.4. Adsorption of growth species on the c-BN surface -- 8.5. Surface migration during growth of c-BN
9. Effect of substrates on the vapour phase growth of thin film materials -- 9.1. Substrate effect on the vapour phase growth of c-BN -- 9.2. Combined effect of substrate and terminating species on the vapour phase growth of c-BN -- 9.3. Electron bond populations -- 9.4. Degree of electron transfer -- 9.5. Conclusions
10. Construction of growth reaction pathways -- 10.1. Simulation of an experimentally suggested c-BN growth mechanism
11. Other types of material growth in a CVD reactor -- 11.1. Diamond-to-graphene transformation.
Abstract: Chemical vapour deposition (CVD) is a vacuum deposition method used to produce high-quality, high-performance, solid materials. This is the first book to cover CVD growth processes at the atomic level using a combination of theoretical and experimental tools, including density functional theory (DFT) calculations.
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"Version: 20221201"--Title page verso.

Includes bibliographical references.

1. Introduction -- 1.1. Chemical vapour phase deposition -- 1.2. Overview of thin film characterization techniques -- 1.3. Theoretical modelling and simulations

2. Common CVD reactor setups -- 2.1. General -- 2.2. Classification of CVD reactors

3. CVD processes on an atomic level -- 3.1. Introduction -- 3.2. Chemical reactions in the substrate/thin film interface -- 3.3. Chemical reactions in the thin film/gas interface

4. Theoretical methods and methodologies -- 4.1. General -- 4.2. The Schr�odinger equation -- 4.3. The density functional theory method -- 4.4. Geometry optimizations -- 4.5. Transition state search -- 4.6. Process energies -- 4.7. Property analysis methods

5. Construction of solid surface models -- 5.1. Surfaces within materials science of today -- 5.2. Surface reactivities -- 5.3. Surface planes -- 5.4. Surface morphologies -- 5.5. Surface relaxation -- 5.6. Surface reconstruction -- 5.7. Construction of model surfaces for CVD simulations

6. Thermodynamic modelling of CVD growth processes -- 6.1. General -- 6.2. Stability of non-terminated surfaces -- 6.3. Surface termination -- 6.4. Creation of surface reactive sites -- 6.5. Adsorption of growth species -- 6.6. Identification of the rate-limiting step in the CVD growth of diamond -- 6.7. Influence of dopants on the growth process

7. Identification of growth mechanisms for ALD deposition of Cu -- 7.1. General -- 7.2. Test-calculations -- 7.3. Adsorption of Cu-containing growth species -- 7.4. Disproportionation of the copper(I)chloride molecule -- 7.5. Removal of Cl from the CuCl adsorbate -- 7.6. Reaction barriers

8. Prerequisites for vapour phase growth of phase pure cubic BN -- 8.1. Energetical vapour phase deposition -- 8.2. Gentle chemical vapour phase deposition -- 8.3. Termination of the c-BN surface -- 8.4. Adsorption of growth species on the c-BN surface -- 8.5. Surface migration during growth of c-BN

9. Effect of substrates on the vapour phase growth of thin film materials -- 9.1. Substrate effect on the vapour phase growth of c-BN -- 9.2. Combined effect of substrate and terminating species on the vapour phase growth of c-BN -- 9.3. Electron bond populations -- 9.4. Degree of electron transfer -- 9.5. Conclusions

10. Construction of growth reaction pathways -- 10.1. Simulation of an experimentally suggested c-BN growth mechanism

11. Other types of material growth in a CVD reactor -- 11.1. Diamond-to-graphene transformation.

Chemical vapour deposition (CVD) is a vacuum deposition method used to produce high-quality, high-performance, solid materials. This is the first book to cover CVD growth processes at the atomic level using a combination of theoretical and experimental tools, including density functional theory (DFT) calculations.

Researchers active in the field of CVD.

Also available in print.

Mode of access: World Wide Web.

System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.

Karin Larsson is a Professor Emerita of Inorganic Chemistry at the Department of Chemistry-Angstrom Laboratory, Uppsala University, Sweden.

Title from PDF title page (viewed on January 9, 2023).

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