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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch [electronic resource] / by Viranjay M. Srivastava, Ghanshyam Singh.

By: Srivastava, Viranjay M [author.].
Contributor(s): Singh, Ghanshyam [author.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Analog Circuits and Signal Processing: 122Publisher: Cham : Springer International Publishing : Imprint: Springer, 2014Description: XV, 199 p. 55 illus., 45 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783319011653.Subject(s): Engineering | Semiconductors | Electrical engineering | Electronic circuits | Engineering | Circuits and Systems | Communications Engineering, Networks | SemiconductorsAdditional physical formats: Printed edition:: No titleDDC classification: 621.3815 Online resources: Click here to access online
Contents:
Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.
In: Springer eBooksSummary: This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  �         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; �         Explains the design of RF switches using the technologies presented and simulates switches; �         Verifies parameters and discusses feasibility of devices and switches.
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Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  �         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; �         Explains the design of RF switches using the technologies presented and simulates switches; �         Verifies parameters and discusses feasibility of devices and switches.

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