000 | 03943nam a22005055i 4500 | ||
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001 | 978-3-319-08078-9 | ||
003 | DE-He213 | ||
005 | 20200420221255.0 | ||
007 | cr nn 008mamaa | ||
008 | 140806s2015 gw | s |||| 0|eng d | ||
020 |
_a9783319080789 _9978-3-319-08078-9 |
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024 | 7 |
_a10.1007/978-3-319-08078-9 _2doi |
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050 | 4 | _aTK7800-8360 | |
050 | 4 | _aTK7874-7874.9 | |
072 | 7 |
_aTJF _2bicssc |
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072 | 7 |
_aTEC008000 _2bisacsh |
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072 | 7 |
_aTEC008070 _2bisacsh |
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082 | 0 | 4 |
_a621.381 _223 |
100 | 1 |
_aLevinzon, Felix. _eauthor. |
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245 | 1 | 0 |
_aPiezoelectric Accelerometers with Integral Electronics _h[electronic resource] / _cby Felix Levinzon. |
264 | 1 |
_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2015. |
|
300 |
_aXV, 169 p. 99 illus., 37 illus. in color. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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505 | 0 | _aIntroduction to Piezoelectric Accelerometers with Integral Electronics -- Piezoelectric Transducers Used for Piezoelectric Accelerometers with Integral Electronics -- Integral FET Amplifiers Used for IEPE Accelerometers -- Noise of a FET Amplifier -- Comparison of 1/f Noise and Thermal Noise in JFETs and MOSFETs -- Fundamental Noise Limit of an IEPE Accelerometer -- Noise of and IEPE Accelerometer -- Ultra-low-noise IEPE Seismic Accelerometers -- High-temperature, up to 175 ºC, Miniature IEPE Accelerometers. | |
520 | _aThis book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics  useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/√Hz). The discussion also includes ultra-low-noise (at level of 3 ng/√Hz) seismic IEPE accelerometers and high temperature (up to 175� C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. • Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; • Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; • Describes recently design of ultra-low-noise (at level of 3 ng/√Hz) IEPE seismic accelerometers and high temperature (up to 175� C) triaxial and single axis miniature IEPE accelerometers; • Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/√Hz) JFET; • Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics. | ||
650 | 0 | _aEngineering. | |
650 | 0 | _aMechanical engineering. | |
650 | 0 | _aElectronics. | |
650 | 0 | _aMicroelectronics. | |
650 | 0 | _aElectronic circuits. | |
650 | 1 | 4 | _aEngineering. |
650 | 2 | 4 | _aElectronics and Microelectronics, Instrumentation. |
650 | 2 | 4 | _aCircuits and Systems. |
650 | 2 | 4 | _aMechanical Engineering. |
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9783319080772 |
856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-3-319-08078-9 |
912 | _aZDB-2-ENG | ||
942 | _cEBK | ||
999 |
_c52844 _d52844 |