| 000 | 05937nam a2201345 i 4500 | ||
|---|---|---|---|
| 001 | 5265897 | ||
| 003 | IEEE | ||
| 005 | 20200421114115.0 | ||
| 006 | m o d | ||
| 007 | cr |n||||||||| | ||
| 008 | 100317t20152000nyua ob 001 0 eng d | ||
| 020 |
_a9780470544105 _qelectronic |
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| 020 |
_z9780780334793 _qprint |
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| 020 |
_z0470544104 _qelectronic |
||
| 024 | 7 |
_a10.1109/9780470544105 _2doi |
|
| 035 | _a(CaBNVSL)mat05265897 | ||
| 035 | _a(IDAMS)0b000064810c5a80 | ||
| 040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
||
| 050 | 4 |
_aTK7871.85 _b.H475 2000eb |
|
| 082 | 0 | 4 |
_a621.3815/2 _222 |
| 100 | 1 |
_aHess, Karl, _d1945- |
|
| 245 | 1 | 0 |
_aAdvanced theory of semiconductor devices / _cKarl Hess. |
| 264 | 1 |
_aNew York : _bIEEE Press, _cc2000. |
|
| 264 | 2 |
_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2009] |
|
| 300 |
_a1 PDF (xv, 332 pages) : _billustrations. |
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| 336 |
_atext _2rdacontent |
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| 337 |
_aelectronic _2isbdmedia |
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| 338 |
_aonline resource _2rdacarrier |
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| 504 | _aIncludes bibliographical references. | ||
| 505 | 0 | _aPreface. Acknowledgments. A Brief Review of the Basic Equations. The Symmetry of the Crystal Lattice. The Theory of Energy Bands in Crystals. Imperfections of Ideal Crystal Structure. Equilibrium Statistics for Electrons and Holes. Self-Consistent Potentials and Dielectric Properties. Scattering Theory. The Boltzmann Transport Equation. Generation-Recombination. The Heterojunction Barrier. The Device Equations of Shockley and Stratton. Numerical Device Simulations. Diodes. Laser Diodes. Transistors. Future Semiconductor Devices. Appendix A: Tunneling and the Golden Rule. Appendix B: The One Band Approximation. Appendix C: Temperature Dependence of the Band Structure. Appendix D: Hall Effect and Magnetoresistance. Appendix E: The Power Balance Equation. Appendix F: The Self-Consistent Potential at a Heterojunction. Appendix G: Schottky Barrier Transport. Index. About the Author. | |
| 506 | 1 | _aRestricted to subscribers or individual electronic text purchasers. | |
| 520 | _aSemiconductor devices are ubiquitous in today's world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design. Advanced Theory of Semiconductor Devices will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p-n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology. This in-depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices. | ||
| 530 | _aAlso available in print. | ||
| 538 | _aMode of access: World Wide Web | ||
| 588 | _aDescription based on PDF viewed 12/21/2015. | ||
| 650 | 0 | _aSemiconductors. | |
| 655 | 0 | _aElectronic books. | |
| 695 | _aApproximation methods | ||
| 695 | _aAtomic measurements | ||
| 695 | _aBiographies | ||
| 695 | _aBoltzmann equation | ||
| 695 | _aCharge carrier processes | ||
| 695 | _aCoils | ||
| 695 | _aCompounds | ||
| 695 | _aComputational modeling | ||
| 695 | _aConductivity | ||
| 695 | _aCrystals | ||
| 695 | _aCurrent density | ||
| 695 | _aDielectrics | ||
| 695 | _aDiode lasers | ||
| 695 | _aDistribution functions | ||
| 695 | _aDoping | ||
| 695 | _aEffective mass | ||
| 695 | _aEigenvalues and eigenfunctions | ||
| 695 | _aElectric fields | ||
| 695 | _aElectric potential | ||
| 695 | _aEllipsoids | ||
| 695 | _aEnergy loss | ||
| 695 | _aEnergy states | ||
| 695 | _aEquations | ||
| 695 | _aFinite element methods | ||
| 695 | _aForce | ||
| 695 | _aGallium arsenide | ||
| 695 | _aHall effect | ||
| 695 | _aHeterojunctions | ||
| 695 | _aImpurities | ||
| 695 | _aIndexes | ||
| 695 | _aJunctions | ||
| 695 | _aLattices | ||
| 695 | _aLight sources | ||
| 695 | _aMagnetic fields | ||
| 695 | _aMagnetoresistance | ||
| 695 | _aMaterials | ||
| 695 | _aMathematical model | ||
| 695 | _aMetals | ||
| 695 | _aMoment methods | ||
| 695 | _aNearest neighbor searches | ||
| 695 | _aP-n junctions | ||
| 695 | _aPhonons | ||
| 695 | _aPhysics | ||
| 695 | _aPoisson equations | ||
| 695 | _aPotential energy | ||
| 695 | _aQuantum capacitance | ||
| 695 | _aQuantum mechanics | ||
| 695 | _aRadiative recombination | ||
| 695 | _aRegions | ||
| 695 | _aResistance | ||
| 695 | _aScattering | ||
| 695 | _aSchottky barriers | ||
| 695 | _aSchottky diodes | ||
| 695 | _aSchrodinger equation | ||
| 695 | _aSemiconductor devices | ||
| 695 | _aSemiconductor process modeling | ||
| 695 | _aSilicon | ||
| 695 | _aSolids | ||
| 695 | _aSpontaneous emission | ||
| 695 | _aSteady-state | ||
| 695 | _aSurface contamination | ||
| 695 | _aSurface emitting lasers | ||
| 695 | _aSurface reconstruction | ||
| 695 | _aTaylor series | ||
| 695 | _aTemperature | ||
| 695 | _aTemperature dependence | ||
| 695 | _aThermionic emission | ||
| 695 | _aTransistors | ||
| 695 | _aTunneling | ||
| 695 | _aVibrations | ||
| 695 | _aVideo recording | ||
| 695 | _aWave functions | ||
| 710 | 2 |
_aJohn Wiley & Sons, _epublisher. |
|
| 710 | 2 |
_aIEEE Xplore (Online service), _edistributor. |
|
| 776 | 0 | 8 |
_iPrint version: _z9780780334793 |
| 856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5265897 |
| 942 | _cEBK | ||
| 999 |
_c59515 _d59515 |
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