000 | 03315nam a2200889 i 4500 | ||
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001 | 5361029 | ||
003 | IEEE | ||
005 | 20200421114117.0 | ||
006 | m o d | ||
007 | cr |n||||||||| | ||
008 | 110519t20152009njua ob 001 0 eng d | ||
010 | _z �2011377262 (print) | ||
015 | _z015-17502 (print) | ||
015 | _zGBA944641 (print) | ||
016 | _z015175021 (print) | ||
020 |
_z0471731722 _qpaper |
||
020 |
_z0470455268 _qelectronic |
||
020 |
_a9780470455265 _qelectronic |
||
020 |
_z9780471731726 _qpaper |
||
024 | 7 |
_a10.1002/9780470455265 _2doi |
|
035 | _a(CaBNVSL)mat05361029 | ||
035 | _a(IDAMS)0b00006481178849 | ||
040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
||
050 | 4 |
_aTK7871.99.M44 _bR455 2009eb |
|
084 |
_aELT 358f _2stub |
||
084 |
_aZN 4960 _2rvk |
||
245 | 0 | 0 |
_aReliability wearout mechanisms in advanced CMOS technologies / _cAlvin W. Strong ... [et al.]. |
264 | 1 |
_aPiscataway, New Jersey : _bIEEE Press, _cc2009. |
|
300 |
_a1 PDF (xv, 624 pages) : _billustrations. |
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336 |
_atext _2rdacontent |
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337 |
_aelectronic _2isbdmedia |
||
338 |
_aonline resource _2rdacarrier |
||
490 | 1 |
_aIEEE Press series on microelectronic systems ; _v12 |
|
504 | _aIncludes bibliographical references and index. | ||
505 | 0 | _aIntroduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Su�n�e -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Su�n�e -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan. | |
506 | 1 | _aRestricted to subscribers or individual electronic text purchasers. | |
538 | _aMode of access: World Wide Web. | ||
588 | _aDescription based on PDF viewed 12/18/2015. | ||
650 | 0 |
_aMetal oxide semiconductors, Complementary _xReliability. |
|
655 | 0 | _aElectronic books. | |
695 | _aWires | ||
695 | _aStress | ||
695 | _aSubstrates | ||
695 | _aTransistors | ||
695 | _aSilicon | ||
695 | _aStrain | ||
695 | _aNitrogen | ||
695 | _aReliability | ||
695 | _aReliability engineering | ||
695 | _aMOSFET circuits | ||
695 | _aMaterials | ||
695 | _aMetallization | ||
695 | _aInterface states | ||
695 | _aJunctions | ||
695 | _aLogic gates | ||
695 | _aForce | ||
695 | _aHot carriers | ||
695 | _aIndexes | ||
695 | _aElectric breakdown | ||
695 | _aElectromigration | ||
695 | _aElectron traps | ||
695 | _aDegradation | ||
695 | _aDielectrics | ||
695 | _aCMOS integrated circuits | ||
695 | _aCMOS technology | ||
695 | _aCharge carrier processes | ||
695 | _aAtomic measurements | ||
695 | _aBooks | ||
695 | _aAcceleration | ||
700 | 1 |
_aStrong, Alvin Wayne, _d1946- |
|
710 | 2 |
_aWiley, _epublisher. |
|
710 | 2 |
_aIEEE Xplore (Online Service), _edistributor. |
|
776 | 0 | 8 |
_iPrint version: _w 2011377262 _z9780471731726 |
830 | 0 |
_aIEEE Press Series on Microelectronic Systems ; _v12 |
|
856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5361029 |
942 | _cEBK | ||
999 |
_c59604 _d59604 |