| 000 | 05395nam a2200913 i 4500 | ||
|---|---|---|---|
| 001 | 5681002 | ||
| 003 | IEEE | ||
| 005 | 20200421114119.0 | ||
| 006 | m o d | ||
| 007 | cr |n||||||||| | ||
| 008 | 151221s2009 njua ob 001 eng d | ||
| 020 |
_a9780470823446 _qelectronic |
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| 020 |
_z9780470823422 _qcloth |
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| 020 |
_z0470823429 _qcloth |
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| 020 |
_z0470823445 _qelectronic |
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_z0470823437 _qelectronic |
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_z9780470823439 _qelectronic |
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| 024 | 7 |
_a10.1002/9780470823446 _2doi |
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| 024 | 8 | _a9786612382109 | |
| 035 | _a(CaBNVSL)mat05681002 | ||
| 035 | _a(IDAMS)0b0000648145d11d | ||
| 040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
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| 050 | 4 |
_aTK7874.75 _b.B52 2009eb |
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| 100 | 1 |
_aBhattacharyya, A. B., _q(Amalendu Bhushan) _eauthor. |
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| 245 | 1 | 0 |
_aCompact MOSFET models for VLSI design / _cA.B. Bhattacharyya. |
| 264 | 1 |
_aSingapore ; _bJohn Wiley & Sons (Asia), _cc2009. |
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| 264 | 2 |
_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2009] |
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| 300 |
_a1 PDF (xxiv, 432 pages) : _billustrations. |
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| 336 |
_atext _2rdacontent |
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| 337 |
_aelectronic _2isbdmedia |
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| 338 |
_aonline resource _2rdacarrier |
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| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _aSemiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method. | |
| 506 | 1 | _aRestricted to subscribers or individual electronic text purchasers. | |
| 520 | _aPracticing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. . Adopts a unified approach to guide students through the confusing array of MOSFET models. Links MOS physics to device models to prepare practitioners for real-world design activities. Helps fabless designers bridge the gap with off-site foundries. Features rich coverage of: . quantum mechanical related phenomena. Si-Ge strained-Silicon substrate. non-classical structures such as Double Gate MOSFETs . Presents topics that will prepare readers for long-term developments in the field. Includes solutions in every chapter. Can be tailored for use among students and professionals of many levels. Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner's reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: <a href="http://www.wiley.com/go/bhattacharyya">www.wiley.com/go/bhattacharyya</a>. | ||
| 530 | _aAlso available in print. | ||
| 538 | _aMode of access: World Wide Web | ||
| 588 | _aDescription based on PDF viewed 12/21/2015. | ||
| 650 | 0 |
_aIntegrated circuits _xVery large scale integration _xDesign and construction. |
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| 650 | 0 |
_aMetal oxide semiconductor field-effect transistors _xDesign and construction. |
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| 655 | 0 | _aElectronic books. | |
| 695 | _aCMOS integrated circuits | ||
| 695 | _aConductivity | ||
| 695 | _aCrystals | ||
| 695 | _aDielectrics | ||
| 695 | _aDifferential equations | ||
| 695 | _aDoping | ||
| 695 | _aElectric potential | ||
| 695 | _aEllipsoids | ||
| 695 | _aEnergy states | ||
| 695 | _aEquations | ||
| 695 | _aGuidelines | ||
| 695 | _aIndexes | ||
| 695 | _aIntegrated circuit modeling | ||
| 695 | _aInterpolation | ||
| 695 | _aLogic gates | ||
| 695 | _aMOS capacitors | ||
| 695 | _aMOSFET circuits | ||
| 695 | _aMOSFETs | ||
| 695 | _aMathematical model | ||
| 695 | _aMobile communication | ||
| 695 | _aNoise | ||
| 695 | _aNumerical models | ||
| 695 | _aPeriodic structures | ||
| 695 | _aSemiconductor process modeling | ||
| 695 | _aSilicon | ||
| 695 | _aSilicon on insulator technology | ||
| 695 | _aSpace charge | ||
| 695 | _aSpline | ||
| 695 | _aSubstrates | ||
| 695 | _aThreshold voltage | ||
| 695 | _aTransient analysis | ||
| 695 | _aVery large scale integration | ||
| 710 | 2 |
_aIEEE Xplore (Online Service), _edistributor. |
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| 710 | 2 |
_aWiley InterScience (Online service), _epublisher. |
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| 776 | 0 | 8 |
_iPrint version: _z9780470823422 |
| 856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5681002 |
| 942 | _cEBK | ||
| 999 |
_c59668 _d59668 |
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