000			04877cam a2200517Ii 4500
001			on1056176718
003			OCoLC
005			20220711203209.0
006			m o d
007			cr cnu---unuuu
008			181009s2018 gw ob 001 0 eng d
040			_aN$T _beng _erda _epn _cN$T _dDG1 _dN$T _dRECBK _dDG1 _dUKMGB _dOCLCF _dOTZ _dUAB _dMERER
015			_aGBB8I8504 _2bnb
016	7		_a019079418 _2Uk
020			_a9783527811854 _q(electronic bk.)
020			_a3527811850 _q(electronic bk.)
020			_a9783527811861 _q(electronic bk.)
020			_a3527811869 _q(electronic bk.)
020			_z9783527343584 _q(print)
029	1		_aUKMGB _b019079418
035			_a(OCoLC)1056176718
037			_a9783527811854 _bWiley
050		4	_aTK7874.84
072		7	_aTEC _x009070 _2bisacsh
082	0	4	_a621.381 _223
049			_aMAIN
245	0	0	_aAdvanced nanoelectronics : _bpost-silicon materials and devices / _cedited by Muhammad Mustafa Hussain.
264		1	_aWeinheim, Germany : _bWiley-VCH, _c[2019]
264		4	_c©2019
300			_a1 online resource
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
505	0		_aThe Future of CMOS: More Moore or a New Disruptive Technology? / Nazek El-Atab, Muhammad M Hussain -- Nanowire Field-Effect Transistors / Debarghya Sarkar, Ivan S Esqueda, Rehan Kapadia -- Two-dimensional Materials for Electronic Applications / Haimeng Zhang, Han Wang -- Integration of Germanium into Modern CMOS: Challenges and Breakthroughs / Wonil Chung, Heng Wu, Peide D Ye -- Carbon Nanotube Logic Technology / Jianshi Tang, Shu-Jen Han -- Tunnel Field-Effect Transistors / Deblina Sarkar -- Energy-Efficient Computing with Negative Capacitance / Asif I Khan -- Spin-Based Devices for Logic, Memory, and Non-Boolean Architectures / Supriyo Bandyopadhyay -- Terahertz Properties and Applications of GaN / Berardi Sensale-Rodriguez.
504			_aIncludes bibliographical references and index.
588	0		_aOnline resource; title from PDF title page (John Wiley, viewed October 10, 2018).
520			_aBrings novel insights to a vibrant research area with high application potential'covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
650		0	_aNanoelectronics. _94822
650		7	_aTECHNOLOGY & ENGINEERING / Mechanical. _2bisacsh _95211
650		7	_aNanoelectronics. _2fast _0(OCoLC)fst01741867 _94822
655		4	_aElectronic books. _93294
700	1		_aHussain, Muhammad Mustafa, _eeditor. _95212
856	4	0	_uhttps://doi.org/10.1002/9783527811861 _zWiley Online Library
942			_cEBK
994			_a92 _bDG1
999			_c68437 _d68437