| 000 | 07469cam a2200625Ki 4500 | ||
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| 001 | on1083521812 | ||
| 003 | OCoLC | ||
| 005 | 20220711203459.0 | ||
| 006 | m o d | ||
| 007 | cr cnu|||unuuu | ||
| 008 | 190128s2019 njua ob 001 0 eng d | ||
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| 020 |
_a9781119523512 _q(electronic book) |
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| 020 |
_a1119523516 _q(electronic book) |
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| 020 |
_a9781119523543 _q(electronic book) |
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| 020 | _z9781119523536 | ||
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_aAU@ _b000065043718 |
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_aTK7871.95 _b.S24 2019 |
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_aTEC _x009070 _2bisacsh |
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| 082 | 0 | 4 |
_a621.3815/284 _223 |
| 049 | _aMAIN | ||
| 100 | 1 |
_aSahay, Shubham, _eauthor. _98073 |
|
| 245 | 1 | 0 |
_aJunctionless Field-Effect Transistors : _bDesign, Modeling, and Simulation / _cShubham Sahay, Mamidala Jagadesh Kumar. |
| 264 | 1 |
_aHoboken, New Jersey : _bJohn Wiley & Sons Inc., _c[2019] |
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| 300 | _a1 online resource | ||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 490 | 1 | _aIEEE Press series on microelectronic systems | |
| 504 | _aIncludes bibliographical references and index. | ||
| 520 | _aA comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture. JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop reference on the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: -Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET -Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation -Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs -Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices. | ||
| 588 | 0 | _aOnline resource; title from digital title page (viewed on March 20, 2019). | |
| 505 | 0 | _aIntro; Junctionless Field-Effect Transistors; Contents; Preface; 1 Introduction to Field-Effect Transistors; 1.1 Transistor Action; 1.2 Metal-Oxide-Semiconductor Field-Effect Transistors; 1.2.1 "Field-Effect" and Operation Modes; 1.2.2 MOSFET as a Switch; 1.2.3 Transfer Characteristics and Output Characteristics; 1.3 MOSFET Circuits: The Need for Complementary MOS; 1.3.1 CMOS Inverter; 1.3.2 Power Dissipation in CMOS Inverter; 1.4 The Need for CMOS Scaling; 1.5 Moore's Law; 1.6 Koomey's Law; 1.7 Challenges in Scaling the MOSFET; 1.7.1 Short-Channel Effects; 1.7.2 Hot Electron Effect | |
| 505 | 8 | _a1.7.3 Gate-Induced Drain Leakage1.7.4 Direct Source to Drain Tunneling; 1.7.5 Boltzmann Tyranny; 1.7.6 Ultrasteep Doping Profile; 1.8 Conclusion; References; 2 Emerging FET Architectures; 2.1 Tunnel FETs; 2.1.1 Structure; 2.1.2 Operation; 2.1.3 Challenges; 2.2 Impact Ionization MOSFET; 2.2.1 Structure; 2.2.2 Operation and Characteristics; 2.2.3 Challenges; 2.3 BIPOLAR I-MOS; 2.3.1 Structure; 2.3.2 Operation and Characteristics; 2.3.3 Challenges; 2.4 Negative capacitance FETs; 2.4.1 Negative Capacitance in Ferroelectric Materials; 2.4.2 Structure; 2.4.3 Operation and Characteristics | |
| 505 | 8 | _a2.4.4 Challenges2.5 Two-Dimensional FETs; 2.5.1 Structure; 2.5.2 Operation; 2.5.3 Challenges; 2.6 Nanowire FETs; 2.6.1 Structure and Characteristics; 2.6.2 Gate-Induced Drain Leakage; 2.6.3 Challenges; 2.7 Nanotube FETs; 2.7.1 Structure; 2.7.2 Operation and Characteristics; 2.7.3 Gate-Induced Drain Leakage; 2.7.4 Dynamic Performance; 2.7.5 Impact of Spacer Material; 2.7.6 Impact of Core Diameter; 2.7.7 Challenges; 2.8 Conclusion; References; 3 Fundamentals of Junctionless Field-Effect Transistors; 3.1 Device Structure; 3.2 Operation; 3.2.1 Full Depletion; 3.2.2 Partial Depletion | |
| 505 | 8 | _a3.2.3 Flat Band Condition3.2.4 Accumulation; 3.3 Design Parameters; 3.3.1 Fabrication Flow; 3.4 Parameters that Affect the Performance; 3.4.1 Mobility; 3.4.2 Impact of Strain on Mobility; 3.4.3 Carrier Ballisticity; 3.4.4 Temperature Dependence; 3.4.5 Bias Temperature Instability; 3.4.6 Low-Frequency Noise; 3.4.7 Short-Channel Effects; 3.5 Beyond Silicon JLFETs: Other Materials; 3.5.1 Germanium JLFETs; 3.5.2 Indium Gallium Arsenide JLFETs; 3.5.3 Gallium Nitride JLFETs; 3.6 Challenges; 3.6.1 High Source/Drain Series Resistance; 3.6.2 Random Dopant Fluctuations; 3.6.3 RDF in JLFETs | |
| 505 | 8 | _a3.6.4 Sensitivity to Process Variations3.6.5 Fabrication Issues; 3.6.6 Band-to-Band Tunneling in OFF-State; 3.7 Conclusion; References; 4 Device Architectures to Mitigate Challenges in Junctionless Field-Effect Transistors; 4.1 Junctionless Accumulation-Mode Field-Effect Transistors; 4.1.1 Structure; 4.1.2 Operation; 4.1.3 Challenges; 4.2 Realizing Efficient Volume Depletion; 4.3 SOI JLFET With A High- Box; 4.3.1 Structure; 4.3.2 Transfer Characteristics; 4.3.3 Operation; 4.3.4 Impact of Gate Length Scaling; 4.3.5 Impact of BOX Thickness and Ground Plane Doping; 4.3.6 Impact of Traps | |
| 650 | 0 |
_aMetal semiconductor field-effect transistors. _98074 |
|
| 650 | 7 |
_aTECHNOLOGY & ENGINEERING _xMechanical. _2bisacsh _98075 |
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| 650 | 7 |
_aMetal semiconductor field-effect transistors. _2fast _0(OCoLC)fst01017679 _98074 |
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| 655 | 4 |
_aElectronic books. _93294 |
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| 700 | 1 |
_aKumar, Mamidala Jagadesh, _eauthor. _98076 |
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| 776 | 0 | 8 |
_iPrint version: _z1119523532 _z9781119523536 _w(OCoLC)1039924256 |
| 830 | 0 |
_aIEEE Press series on microelectronic systems. _96746 |
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| 856 | 4 | 0 |
_uhttps://doi.org/10.1002/9781119523543 _zWiley Online Library |
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| 994 |
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| 999 |
_c69014 _d69014 |
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