000			03773cam a2200349Ii 4500
001			9781315186146
008			180706t20182018si ad ob 001 0 eng d
020			_a9781315186146 _q(e-book : PDF)
020			_a9781351736206 _q(e-book: Mobi)
020			_z9789814774208 _q(hardback)
024	7		_a10.1201/9781315186146 _2doi
035			_a(OCoLC)1005684994
040			_aFlBoTFG _cFlBoTFG _erda
050		4	_aQD341.H9 _bE65 2018
082	0	4	_a547.61 _bE643
245	0	0	_aEpitaxial graphene on silicon carbide : _bmodelling, characterization, and applications / _cedited by Gemma Rius, Philippe Godignon.
264		1	_aSingapore : _bPan Stanford Publishing, _c[2018]
264		4	_c©2018
300			_a1 online resource (xiii, 199 pages)
336			_atext _2rdacontent
337			_acomputer _2rdamedia
338			_aonline resource _2rdacarrier
505	0	0	_tchapter 1 Epitaxial graphene on SiC substrate: A view from a specialist of SiC growth and materials science / _r Gabriel Ferro -- _tchapter 2 Growth Mechanism, Structures, and Properties of Graphene on SiC(0001) Surfaces: Theoretical and Experimental Studies at the Atomic Scale / _r Wataru Norimatsu Stephan Irle Michiko Kusunoki -- _tchapter 3 Fabrication of Graphene by Thermal Decomposition of SiC / _r Gholam Reza Yazdi Tihomir Iakimova Rositza Yakimova -- _tchapter 4 Nanoscale electrical and structural properties of epitaxial graphene interface with sic(0001) / _r Filippo Giannazzo Ioannis Deretzis Antonino La Magna Giuseppe Nicotra Corrado Spinella Fabrizio Roccaforte Rositza Yakimova -- _tchapter 5 Theory of graphene growth on sic substrate / _r Hiroyuki Kageshima -- _tchapter 6 Epitaxial Graphene on SiC from the Viewpoint of Planar Technology / _r Gemma Rius Philippe Godignon -- _tchapter 7 Beauty of Quantum Transport in Graphene / _r Benoit Jouault Félicien Schopfer Wilfrid Poirier.
520			_a"This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum-processing, partial-pressure, or graphite cap controlled-sublimation techniques. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia."--Provided by publisher.
650		0	_aGraphene _xElectric properties. _913866
650		0	_aNanoelectronics _xMaterials. _913867
700	1		_aGodignon, Philippe, _eeditor. _913868
700	1		_aRius, Gemma, _eeditor. _913869
776	0	8	_iPrint version: _z9789814774208
856	4	0	_uhttps://www.taylorfrancis.com/books/9781315186146 _zClick here to view.
942			_cEBK
999			_c70542 _d70542