000 01402cam a2200385Ma 4500
001 9780429145520
003 FlBoTFG
005 20220711212327.0
006 m o d
007 cr mnummmmuuuu
008 090105s2007 flua ob 001 0 eng d
040 _aOCoLC-P
_beng
_epn
_cOCoLC-P
020 _a9780750309936
020 _a0750309938
035 _a(OCoLC)652434251
035 _a(OCoLC-P)652434251
050 4 _aTK7871.95
082 0 4 _a621.3815/284
_222
100 1 _aMaiti, C. K.
_915500
245 1 0 _aStrained-Si heterostructure field effect devices /
_cC.K. Maiti, S. Chattopadhyay, L.K. Bera.
260 _aBoca Raton :
_bCRC Press,
_c©2007.
300 _a1 online resource (423 pages) :
_billustrations.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
490 1 _aSeries in materials science and engineering
588 _aOCLC-licensed vendor bibliographic record.
650 0 _aMetal oxide semiconductor field-effect transistors.
_915501
650 0 _aSilicon
_xElectric properties.
_95172
700 1 _aChattopadhyay, Swapan,
_d1952-
_915502
700 1 _aBera, L. K.
_915503
856 4 0 _3Taylor & Francis
_uhttps://www.taylorfrancis.com/books/9780429145520
856 4 2 _3OCLC metadata license agreement
_uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf
942 _cEBK
999 _c71001
_d71001