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001 9781003093428
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040 _aOCoLC-P
_beng
_cOCoLC-P
020 _a9781000454550
_qelectronic book
020 _a100045455X
_qelectronic book
020 _a9781000454567
_qelectronic book
020 _a1000454568
_qelectronic book
020 _a9781003093428
_qelectronic book
020 _a1003093426
_qelectronic book
020 _z0367554143
020 _z9780367554149
024 7 _a10.1201/9781003093428
_2doi
035 _a(OCoLC)1262437249
035 _a(OCoLC-P)1262437249
050 4 _aTK7871.95
_b.A38 2022
072 7 _aSCI
_x055000
_2bisacsh
072 7 _aTEC
_x007000
_2bisacsh
072 7 _aTEC
_x008010
_2bisacsh
072 7 _aTJFC
_2bicssc
082 0 4 _a621.3815/284
_223
245 0 0 _aAdvanced indium arsenide-based HEMT architectures for terahertz applications /
_cedited by N. Mohankumar.
250 _aFirst edition.
264 1 _aBoca Raton, FL :
_bCRC Press,
_c2022.
264 4 _c©2022
300 _a1 online resource
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
505 0 _aChapter 1: Introduction to III-V materials and HEMT Structure / Sanhita Manna -- Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications / D.Godwinraj -- Chapter 3: III-V Hetero Structure Devices for High Frequency Applications / R. Saravana Kumar -- Chapter 4: Overview of THz Applications / T. Nagarjuna -- Chapter 5: Device and Simulation Framework of InAs HEMTs / V. Mahesh -- Chapter 6: Single Gate (SG) InAs Based HEMTs Architecture for THz Applications / M. Arun Kumar -- Chapter 7: Effect of Gate Scaling and Composite Channel in InAs HEMTs / C. Kamalanathan -- Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications / R. Poorna Chandran -- Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs / Y. Vamshidhar -- Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) -- HEMT / Girish Shankar Mishra.
520 _aHigh electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
588 _aOCLC-licensed vendor bibliographic record.
650 0 _aModulation-doped field-effect transistors.
_916764
650 0 _aIndium arsenide.
_916765
650 0 _aSemiconductors.
_93077
650 0 _aTerahertz technology.
_94765
650 7 _aSCIENCE / Physics
_2bisacsh
_910678
650 7 _aTECHNOLOGY / Electricity
_2bisacsh
_916766
650 7 _aTECHNOLOGY / Electronics / Circuits / General
_2bisacsh
_912515
700 1 _aMohankumar, N.,
_eeditor.
_916767
856 4 0 _3Taylor & Francis
_uhttps://www.taylorfrancis.com/books/9781003093428
856 4 2 _3OCLC metadata license agreement
_uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf
942 _cEBK
999 _c71334
_d71334