000 | 12872nam a2202521 i 4500 | ||
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001 | 5599322 | ||
003 | IEEE | ||
005 | 20220712205744.0 | ||
006 | m o d | ||
007 | cr |n||||||||| | ||
008 | 151221s2010 njua ob 001 eng d | ||
010 | _z 2010006496 (print) | ||
020 | _a9780470649336 | ||
020 | _a047064933X | ||
020 |
_a9780470649343 _qelectronic |
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020 |
_z9781118442166 _qprint |
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020 |
_z0470649348 _qelectronic |
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024 | 7 |
_a10.1002/9780470649343 _2doi |
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035 | _a(CaBNVSL)mat05599322 | ||
035 | _a(IDAMS)0b0000648135491e | ||
040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
||
050 | 4 |
_aTK7874 _b.F885 2010eb |
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245 | 0 | 0 |
_aFuture trends in microelectronics : _bfrom nanophotonics to sensors and energy / _cedited by Serge Luryi, Jimmy Xu, Alex Zaslavsky. |
264 | 1 |
_a[Hoboken, New Jersey] : _bIEEE Press, _cc2010 |
|
264 | 2 |
_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2010] |
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300 |
_a1 PDF (xiii, 431 pages) : _billustrations. |
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336 |
_atext _2rdacontent |
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337 |
_aelectronic _2isbdmedia |
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338 |
_aonline resource _2rdacarrier |
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504 | _aIncludes bibliographical references. | ||
505 | 0 | _aPreface (S. Luryi, J. M. Xu, and A. Zaslavsky) -- 1 OPTOELECTRONICS AND NANOPHOTONICS -- Nanophotonics for Information Systems (Y. Fainman) -- What Will Modern Photonics Contribute to the Development of Future Optical Communication Technology? (Djafar K. Mynbaev) -- Ultrafast Nanophotonic Devices For Optical Interconnects (N. N. Ledentsov) -- Intersubband Quantum-Box Lasers: Progress and Potential as Uncooled Mid-Infrared Sources (D. Botez, G. Tsvid, M. D'Souza, J. C. Shin, Z. Liu, J. H. Park, J. Kirch, L. J. Mawst, M. Rathi, T. F. Kuech, I. Vurgaftman, J. Meyer, J. Plant, G. Turner, and P. Zory) -- GaSb-based Type-I Laser Diodes Operating at 3 �m and Beyond (L. Shterengas, G. Kipshidze, T. Hosoda, and G. Belenky) -- Bridging Optics and Electronics with Quantum Cascade Lasers, Antennas, and Circuits (J. Faist, C. Walther, M. Amanti, G. Scalari, M. Fischer, and M. Beck) -- Towards Intersubband Polaritonics: How Fast Can Light and Electrons Mate? (A. A. Anappara, L. Sorba, A. Tredicucci, G. G�nter, A. Sell, A. Leitenstorfer, R. Huber, S. De Liberato, C. Ciuti, and G. Biasiol) -- Si3N4/SiO2 Planar Photonic Structures Fabricated by Focused Ion Beam (L. A. M. Barea, F. Vallini, D. L. S. Figueira, A. Da Silva Filho, N. C. Frateschi, and A. R. Vaz) -- 2 ELECTRONIC DEVICES AND SYSTEMS -- Silicon-Based Devices and Materials for Nanoscale CMOS and Beyond-CMOS (F. Balestra) -- Device Proposals Beyond Silicon CMOS (P. M. Solomon) -- GeOI as a Platform for Ultimate Devices (W. Van Den Daele, S. Cristoloveanu, E. Augendre, C. Le Royer, J.-F. Damlencourt, D. Kazazis, and A. Zaslavsky) -- Simulation of Self-Heating Effects in Different SOI MOS Architectures (Enrico Sangiorgi, Marco Braccioli and Claudio Fiegna) -- Nanowires: Technology, Physics and Perspectives (D. Gr�tzmacher, Th. Sch�pers, S. Mantl, S. Feste, Q. T. Zhao, H. Hardtdegen, R. Calarco, M. Lepsa, and N. Demarina) -- Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices (T. Baron, C. Agraffeil, F. Dhalluin, M. Kogelschtaz, G. Cunge, T. Chevolleau, B. Salem, B. Salhi, H. Abed, A. Poti�, L. Latu-Romain, C. Ternon, K. Aissou, L. Mont�s, Mur, G. Molas, B. De Salvo, E. Jalaguier, T. Ernst, P. Ferret, P. Gentile, and N. Pauc). | |
505 | 8 | _aScrolled Si/SiGe Heterostructures as Building Blocks for Tube-Like Field-Effect Transistors (N. V. Demarina and D. Gr�tzmacher) -- Silicon Nanowire-Based Nonvolatile Memory Cells: Progress and Prospects (Qiliang Li, X. Zhu, Y. Yang, D. E. Ioannou, J. S. Suehle, and C. A. Richter) -- Prospects and Challenges of Next-Generation Flash Memory Devices (Jang-Sik Lee) -- Chalcogenide Glassy Semiconductors - Could They Replace Silicon in Memory Devices? (K. D. Tsendin) -- Current Status and Recent Developments in RSFQ Processor Design (M. Dorojevets) -- 1/f Noise: The Funeral is Cancelled (or Postponed) (M. E. Levinshtein and S. L. Rumyantsev) -- 3 PHYSICS, BIOLOGY, AND OTHER SISTER SCIENCES -- Spin Hall Effect (M. I. Dyakonov) -- Can Biology Provide Creative Solutions for Next-Generation Memory Devices? (W. E. van den Berg and S. A. Kushner) -- Spin Screening of Magnetization Due to Inverse Proximity Effect in Superconducting/Ferromagnetic Bilayers (V. Shelukhin, M. Karpovski, A. Palevski, J. Xia, A. Kapitulnik, and A. Tsukernik) -- Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting (V. Sverdlov, O. Baumgartner, T. Windbacher, and S. Selberherr) -- Graphene-Based Terahertz Devices: Concepts and Characteristics (V. Ryzhii, M. Ryzhii, A. Satou, N. Ryabova, T. Otsuji, V. Mitin, F. T. Vasko, A. A. Dubinov, V. Y. Aleshkin, and M. S. Shur) -- Directed Self-Assembly - A Controllable Route to Optical and Electronic Devices Based on Single Nanostructures (R. L. Williams, D. Dalacu, M. E. Reimer, K. Mnaymneh, V. Sazonova, P. J. Poole, G. C. Aers, R. Cheriton, S. Fr�d�rick, D. Kim, J. Lapointe, P. Hawrylak, and M. KorkusiDski) -- 4 SENSORS, DETECTORS, AND ENERGY -- Three-Dimensional Position-Sensitive Wide Bandgap Semiconductor Gamma-Ray Imaging Detectors (Zhong He) -- Semiconductor Scintillator for Three-Dimensional Array of Radiation Detectors (Serge Luryi and Arsen Subashiev) -- Semiconductor Gamma Radiation Detectors: Band Structure Effects in Energy Resolution (Arsen Subashiev and Serge Luryi). | |
505 | 8 | _aThe Future of Microelectronics is ... Macroelectronics (M. A. Alam, N. Pimparkar, and B. Ray) -- An Integration Challenge: Information and Communication Technologies to Address Indoor Air Quality in Commercial Buildings (M. D'Iorio) -- Quantum-Dot Infrared Photodetectors: In Search of the Right Design for Room-Temperature Operation (A. Sergeev, V. Mitin, L. H. Chien, and N. Vagidov) -- Treating the Case of Incurable Hysteresis in VO2 (M. Gurvitch, S. Luryi, A. Polyakov, and A. Shabalov) -- Exploratory Studies on Silicon-Based Oxide Fuel Cell Power Sources Incorporating Ultrathin Nanostructured Platinum and Cerium Oxide Films as Anode Components (Bo-Kuai Lai, A. C. Johnson, H. Xiong, C. Ko, and S. Ramanathan) -- Index. | |
506 | 1 | _aRestricted to subscribers or individual electronic text purchasers. | |
520 | _aIn the summer of 2009, leading professionals from industry, government, and academia gathered for a free-spirited debate on the future trends of microelectronics. This volume represents the summary of their valuable contributions. Providing a cohesive exploration and holistic vision of semiconductor microelectronics, this text answers such questions as: What is the future beyond shrinking silicon devices and the field-effect transistor principle? Are there green pastures beyond the traditional semiconductor technologies? This resource also identifies the direction the field is taking, enabling microelectronics professionals and students to conduct research in an informed, profitable, and forward-looking fashion. | ||
530 | _aAlso available in print. | ||
538 | _aMode of access: World Wide Web | ||
588 | _aDescription based on PDF viewed 12/21/2015. | ||
650 | 0 |
_aNanotechnology _xTechnological innovations. _927511 |
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650 | 0 |
_aDetectors _xTechnological innovations. _927512 |
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655 | 0 |
_aElectronic books. _93294 |
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695 | _aAbsorption | ||
695 | _aAnnealing | ||
695 | _aAnodes | ||
695 | _aApertures | ||
695 | _aArrays | ||
695 | _aBiological processes | ||
695 | _aBit rate | ||
695 | _aBolometers | ||
695 | _aBooks | ||
695 | _aBuildings | ||
695 | _aCMOS integrated circuits | ||
695 | _aCMOS technology | ||
695 | _aCapacitance | ||
695 | _aCarbon | ||
695 | _aCarrier confinement | ||
695 | _aCathodes | ||
695 | _aCavity resonators | ||
695 | _aCharge carrier processes | ||
695 | _aChemical sensors | ||
695 | _aCoherence | ||
695 | _aComputers | ||
695 | _aConductivity | ||
695 | _aCorrelation | ||
695 | _aCouplings | ||
695 | _aCurrent | ||
695 | _aCurrent measurement | ||
695 | _aCurrent-voltage characteristics | ||
695 | _aData mining | ||
695 | _aDetectors | ||
695 | _aDielectrics | ||
695 | _aDiode lasers | ||
695 | _aDispersion | ||
695 | _aDistributed Bragg reflectors | ||
695 | _aDoping | ||
695 | _aElectric fields | ||
695 | _aElectric potential | ||
695 | _aElectron optics | ||
695 | _aElectron tubes | ||
695 | _aEnergy loss | ||
695 | _aEnergy resolution | ||
695 | _aEpitaxial growth | ||
695 | _aEquations | ||
695 | _aEtching | ||
695 | _aFabrication | ||
695 | _aFace | ||
695 | _aFilms | ||
695 | _aFlash memory | ||
695 | _aFluctuations | ||
695 | _aFocusing | ||
695 | _aGallium nitride | ||
695 | _aGames | ||
695 | _aGas lasers | ||
695 | _aGases | ||
695 | _aGermanium | ||
695 | _aGratings | ||
695 | _aHall effect | ||
695 | _aHeating | ||
695 | _aHippocampus | ||
695 | _aHospitals | ||
695 | _aHysteresis | ||
695 | _aImpact ionization | ||
695 | _aIndexes | ||
695 | _aIndium phosphide | ||
695 | _aInformation processing | ||
695 | _aLaser transitions | ||
695 | _aLead | ||
695 | _aLithography | ||
695 | _aLogic gates | ||
695 | _aLuminescence | ||
695 | _aMOSFETs | ||
695 | _aMagnetic fields | ||
695 | _aMagnetic hysteresis | ||
695 | _aMagnetization | ||
695 | _aMaterials | ||
695 | _aMetals | ||
695 | _aMetamaterials | ||
695 | _aMicrocavities | ||
695 | _aMicroelectronics | ||
695 | _aMicroprocessors | ||
695 | _aMicrostrip | ||
695 | _aMicrostructure | ||
695 | _aMilling | ||
695 | _aModulation | ||
695 | _aMorphology | ||
695 | _aNanophotonics | ||
695 | _aNanoscale devices | ||
695 | _aNanostructures | ||
695 | _aNanowires | ||
695 | _aNerve fibers | ||
695 | _aNext generation networking | ||
695 | _aNickel | ||
695 | _aNoise | ||
695 | _aNonvolatile memory | ||
695 | _aNumerical analysis | ||
695 | _aOptical device fabrication | ||
695 | _aOptical fibers | ||
695 | _aOptical interconnections | ||
695 | _aOptical losses | ||
695 | _aOptical materials | ||
695 | _aOptical polarization | ||
695 | _aOptical pumping | ||
695 | _aOptical receivers | ||
695 | _aOptical resonators | ||
695 | _aOptical sensors | ||
695 | _aOptical surface waves | ||
695 | _aOptical transmitters | ||
695 | _aOptical waveguides | ||
695 | _aPassivation | ||
695 | _aPassive optical networks | ||
695 | _aPhase change materials | ||
695 | _aPhonons | ||
695 | _aPhotodetectors | ||
695 | _aPhotonic band gap | ||
695 | _aPhotonic crystals | ||
695 | _aPhotonics | ||
695 | _aPhotovoltaic cells | ||
695 | _aPixel | ||
695 | _aPlasmas | ||
695 | _aPower demand | ||
695 | _aProposals | ||
695 | _aPump lasers | ||
695 | _aQuantization | ||
695 | _aQuantum cascade lasers | ||
695 | _aQuantum computing | ||
695 | _aQuantum dots | ||
695 | _aRadiative recombination | ||
695 | _aRandom access memory | ||
695 | _aRegisters | ||
695 | _aResonant frequency | ||
695 | _aResource management | ||
695 | _aScattering | ||
695 | _aSelf-assembly | ||
695 | _aSemiconductor device measurement | ||
695 | _aSemiconductor lasers | ||
695 | _aSemiconductor waveguides | ||
695 | _aSensitivity | ||
695 | _aSensor phenomena and characterization | ||
695 | _aSilicon | ||
695 | _aSilicon germanium | ||
695 | _aSilicon on insulator technology | ||
695 | _aSolid modeling | ||
695 | _aStimulated emission | ||
695 | _aStrain | ||
695 | _aStress | ||
695 | _aSubstrates | ||
695 | _aSuperconducting magnets | ||
695 | _aSwitches | ||
695 | _aSynchronization | ||
695 | _aTechnological innovation | ||
695 | _aTelecommunications | ||
695 | _aTemperature distribution | ||
695 | _aTemperature measurement | ||
695 | _aTemperature sensors | ||
695 | _aTensile strain | ||
695 | _aThermal conductivity | ||
695 | _aThin film transistors | ||
695 | _aThree dimensional displays | ||
695 | _aTunneling | ||
695 | _aVertical cavity surface emitting lasers | ||
695 | _aVoltage measurement | ||
695 | _aWaveguide lasers | ||
695 | _aWires | ||
700 | 1 |
_aLuryi, Serge, _d1947- _927513 |
|
700 | 1 |
_aXu, Jimmy, _d1957- _927514 |
|
700 | 1 |
_aZaslavsky, Alexander, _d1963- _927515 |
|
710 | 2 |
_aIEEE Xplore (Online Service), _edistributor. _927516 |
|
710 | 2 |
_aJohn Wiley & Sons, _epublisher. _96902 |
|
730 | 0 |
_aIEEE Xplore (Livres) _926022 |
|
776 | 0 | 8 |
_iPrint version: _z9781118442166 |
856 | 4 | 2 |
_3Abstract with links to resource _uhttps://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5599322 |
942 | _cEBK | ||
999 |
_c74086 _d74086 |