000 04070nam a22005535i 4500
001 978-981-10-6550-7
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007 cr nn 008mamaa
008 171030s2018 si | s |||| 0|eng d
020 _a9789811065507
_9978-981-10-6550-7
024 7 _a10.1007/978-981-10-6550-7
_2doi
050 4 _aTK7875
072 7 _aTJF
_2bicssc
072 7 _aTEC027000
_2bisacsh
072 7 _aTJF
_2thema
082 0 4 _a621.381
_223
100 1 _aAmiri, Iraj Sadegh.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_91816
245 1 0 _aAnalytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
_h[electronic resource] /
_cby Iraj Sadegh Amiri, Mahdiar Ghadiry.
250 _a1st ed. 2018.
264 1 _aSingapore :
_bSpringer Nature Singapore :
_bImprint: Springer,
_c2018.
300 _aIX, 86 p. 55 illus., 16 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringerBriefs in Applied Sciences and Technology,
_x2191-5318
505 0 _aIntroduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene.
520 _aThis book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.
650 0 _aMicrotechnology.
_928219
650 0 _aMicroelectromechanical systems.
_96063
650 0 _aElectronic circuits.
_919581
650 0 _aNanotechnology.
_94707
650 1 4 _aMicrosystems and MEMS.
_955381
650 2 4 _aElectronic Circuits and Systems.
_955382
650 2 4 _aNanotechnology.
_94707
700 1 _aGhadiry, Mahdiar.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_955383
710 2 _aSpringerLink (Online service)
_955384
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9789811065491
776 0 8 _iPrinted edition:
_z9789811065514
830 0 _aSpringerBriefs in Applied Sciences and Technology,
_x2191-5318
_955385
856 4 0 _uhttps://doi.org/10.1007/978-981-10-6550-7
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c79544
_d79544