000 | 04070nam a22005535i 4500 | ||
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001 | 978-981-10-6550-7 | ||
003 | DE-He213 | ||
005 | 20220801221326.0 | ||
007 | cr nn 008mamaa | ||
008 | 171030s2018 si | s |||| 0|eng d | ||
020 |
_a9789811065507 _9978-981-10-6550-7 |
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024 | 7 |
_a10.1007/978-981-10-6550-7 _2doi |
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050 | 4 | _aTK7875 | |
072 | 7 |
_aTJF _2bicssc |
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_aTEC027000 _2bisacsh |
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072 | 7 |
_aTJF _2thema |
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082 | 0 | 4 |
_a621.381 _223 |
100 | 1 |
_aAmiri, Iraj Sadegh. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _91816 |
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245 | 1 | 0 |
_aAnalytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor _h[electronic resource] / _cby Iraj Sadegh Amiri, Mahdiar Ghadiry. |
250 | _a1st ed. 2018. | ||
264 | 1 |
_aSingapore : _bSpringer Nature Singapore : _bImprint: Springer, _c2018. |
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300 |
_aIX, 86 p. 55 illus., 16 illus. in color. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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_acomputer _bc _2rdamedia |
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_aonline resource _bcr _2rdacarrier |
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_atext file _bPDF _2rda |
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490 | 1 |
_aSpringerBriefs in Applied Sciences and Technology, _x2191-5318 |
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505 | 0 | _aIntroduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene. | |
520 | _aThis book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors. | ||
650 | 0 |
_aMicrotechnology. _928219 |
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650 | 0 |
_aMicroelectromechanical systems. _96063 |
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650 | 0 |
_aElectronic circuits. _919581 |
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650 | 0 |
_aNanotechnology. _94707 |
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650 | 1 | 4 |
_aMicrosystems and MEMS. _955381 |
650 | 2 | 4 |
_aElectronic Circuits and Systems. _955382 |
650 | 2 | 4 |
_aNanotechnology. _94707 |
700 | 1 |
_aGhadiry, Mahdiar. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _955383 |
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710 | 2 |
_aSpringerLink (Online service) _955384 |
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773 | 0 | _tSpringer Nature eBook | |
776 | 0 | 8 |
_iPrinted edition: _z9789811065491 |
776 | 0 | 8 |
_iPrinted edition: _z9789811065514 |
830 | 0 |
_aSpringerBriefs in Applied Sciences and Technology, _x2191-5318 _955385 |
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856 | 4 | 0 | _uhttps://doi.org/10.1007/978-981-10-6550-7 |
912 | _aZDB-2-ENG | ||
912 | _aZDB-2-SXE | ||
942 | _cEBK | ||
999 |
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