000 03512nam a22005295i 4500
001 978-3-319-27192-7
003 DE-He213
005 20220801221735.0
007 cr nn 008mamaa
008 151229s2016 sz | s |||| 0|eng d
020 _a9783319271927
_9978-3-319-27192-7
024 7 _a10.1007/978-3-319-27192-7
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
072 7 _aTJFC
_2thema
082 0 4 _a621.3815
_223
100 1 _aCorreia, Ana Paula Pinto.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_957708
245 1 2 _aA Second-Order ΣΔ ADC Using Sputtered IGZO TFTs
_h[electronic resource] /
_cby Ana Paula Pinto Correia, Pedro Miguel Cândido Barquinha, João Carlos da Palma Goes.
250 _a1st ed. 2016.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2016.
300 _aXIV, 75 p. 54 illus., 12 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringerBriefs in Electrical and Computer Engineering,
_x2191-8120
505 0 _aIntroduction -- Thin-film transistors -- Oxide TFTs @ FCT-UNL -- Analog-to-digital converters -- A 2nd-order ∑∆ ADC with oxide TFTs @ FCT-UNL -- Conclusions and Future Perspectives.-.
520 _aThis book discusses the design, electrical simulation and layout of a 2nd-order ∑∆ analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates. Combines materials science and electronics engineering in the same book, making it possible to obtain a general overview, from TFTs production and characterization to their integration in relatively complex circuits; Adapts an a-Si:H TFT RPI model to simulate the behavior of these devices with good fitting to experimental data; Describes the implementation of a 2nd-order ∑∆ ADC using oxide TFTs.
650 0 _aElectronic circuits.
_919581
650 0 _aElectronics.
_93425
650 1 4 _aElectronic Circuits and Systems.
_957709
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_932249
700 1 _aCândido Barquinha, Pedro Miguel.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_957710
700 1 _aGoes, João Carlos da Palma.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_957711
710 2 _aSpringerLink (Online service)
_957712
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783319271903
776 0 8 _iPrinted edition:
_z9783319271910
830 0 _aSpringerBriefs in Electrical and Computer Engineering,
_x2191-8120
_957713
856 4 0 _uhttps://doi.org/10.1007/978-3-319-27192-7
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c80000
_d80000