| 000 | 03684nam a22005295i 4500 | ||
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| 001 | 978-981-10-5290-3 | ||
| 003 | DE-He213 | ||
| 005 | 20220801222724.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 170906s2018 si | s |||| 0|eng d | ||
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_a9789811052903 _9978-981-10-5290-3 |
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| 024 | 7 |
_a10.1007/978-981-10-5290-3 _2doi |
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_aTJFC _2thema |
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_a621.3815 _223 |
| 100 | 1 |
_aAdhikary, Sourav. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _962992 |
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| 245 | 1 | 0 |
_aQuaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors _h[electronic resource] : _bFrom Materials to Devices / _cby Sourav Adhikary, Subhananda Chakrabarti. |
| 250 | _a1st ed. 2018. | ||
| 264 | 1 |
_aSingapore : _bSpringer Nature Singapore : _bImprint: Springer, _c2018. |
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| 300 |
_aXIII, 63 p. 35 illus., 16 illus. in color. _bonline resource. |
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| 336 |
_atext _btxt _2rdacontent |
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_acomputer _bc _2rdamedia |
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_aonline resource _bcr _2rdacarrier |
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_atext file _bPDF _2rda |
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| 505 | 0 | _aChapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work. | |
| 520 | _aThis book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike. | ||
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_aElectronic circuits. _919581 |
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_aLasers. _97879 |
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_aSignal processing. _94052 |
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| 650 | 1 | 4 |
_aElectronic Circuits and Systems. _962993 |
| 650 | 2 | 4 |
_aLaser. _931624 |
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_aSignal, Speech and Image Processing . _931566 |
| 700 | 1 |
_aChakrabarti, Subhananda. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _962994 |
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| 710 | 2 |
_aSpringerLink (Online service) _962995 |
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| 773 | 0 | _tSpringer Nature eBook | |
| 776 | 0 | 8 |
_iPrinted edition: _z9789811052897 |
| 776 | 0 | 8 |
_iPrinted edition: _z9789811052910 |
| 776 | 0 | 8 |
_iPrinted edition: _z9789811353604 |
| 856 | 4 | 0 | _uhttps://doi.org/10.1007/978-981-10-5290-3 |
| 912 | _aZDB-2-ENG | ||
| 912 | _aZDB-2-SXE | ||
| 942 | _cEBK | ||
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_c81083 _d81083 |
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