000 | 04920cam a2200577 i 4500 | ||
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001 | on1152528047 | ||
003 | OCoLC | ||
005 | 20230516165850.0 | ||
006 | m o d | ||
007 | cr cnu---unuuu | ||
008 | 200429s2020 ne o 001 0 eng d | ||
040 |
_aOPELS _beng _erda _epn _cOPELS _dEBLCP _dOCLCF _dUKAHL _dUKMGB _dOCLCQ _dOCLCO _dCOM _dOCLCQ |
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015 |
_aGBC048794 _2bnb |
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016 | 7 |
_a019759468 _2Uk |
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020 |
_a9780128177877 _q(ePub ebook) |
||
020 | _a012817787X | ||
020 | _z9780128177860 | ||
020 | _z0128177861 | ||
035 | _a(OCoLC)1152528047 | ||
050 | 4 | _aTK7875 | |
082 | 0 | 4 |
_a621.381 _223 |
245 | 0 | 0 |
_aHandbook of silicon based mems materials and technologies / _cedited by Markku Tilli [and five others]. |
250 | _aThird edition. | ||
264 | 1 |
_aAmsterdam : _bElsevier, _c2020. |
|
300 | _a1 online resource | ||
336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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490 | 1 | _aMicro and nano technologies series | |
500 | _aIncludes index. | ||
588 | 0 | _aPrint version record. | |
505 | 0 | _aFront Cover -- Handbook of Silicon Based MEMS Materials and Technologies -- Copyright Page -- Contents -- List of contributors -- Preface -- Where is silicon based MEMS heading to? -- References -- I. Silicon as MEMS Material -- 1 Properties of silicon -- 1.1 Properties of silicon -- 1.1.1 Crystallography of silicon -- 1.1.1.1 Miller index (hkl) system -- 1.1.1.2 Stereographic projection -- 1.1.2 Defects in silicon lattice -- 1.1.3 Mechanical properties of silicon -- 1.1.4 Electrical properties -- 1.1.4.1 Introduction-dopants and impurities in silicon | |
505 | 8 | _a1.1.4.2 Piezoresistive effect in silicon -- General piezoresistive effect -- Strain -- Stress in anisotropic materials -- Strain effect on resistivity -- Linearity -- Effect of temperature and doping -- Example of a piezoresistive sensor design -- Surface effects -- References -- 2 Czochralski growth of silicon crystals -- 2.1 The Czochralski crystal-growing furnace -- 2.1.1 Crucible -- 2.1.2 Hot zone materials -- 2.1.3 Hot zone structure -- 2.1.4 Gas flow -- 2.2 Stages of growth process -- 2.2.1 Melting -- 2.2.2 Neck -- 2.2.3 Crown -- 2.2.4 Body -- 2.2.5 Tail -- 2.2.6 Shut-off | |
505 | 8 | _a2.3 Selected issues of crystal growth -- 2.3.1 Diameter control -- 2.3.2 Doping -- 2.3.3 Hot zone lifetime -- 2.4 Improved thermal and gas-flow designs -- 2.5 Heat transfer -- 2.6 Melt convection -- 2.6.1 Free convection -- 2.6.2 Crucible rotation -- 2.6.3 Crystal rotation -- 2.6.4 Marangoni convection and gas shear -- 2.7 Magnetic fields -- 2.7.1 Cusp field -- 2.7.2 Transverse field -- 2.7.3 Melt flows under transverse field -- 2.7.4 Time-dependent fields -- 2.8 Hot recharging and continuous feed -- 2.8.1 Hot recharging -- 2.8.2 Charge topping -- 2.8.3 Crucible modifications | |
505 | 8 | _a2.8.4 Continuous Czochralski growth -- 2.9 Heavily n-type doped silicon and constitutional supercooling -- 2.9.1 Constitutional supercooling -- 2.9.2 Melting-point depression -- 2.9.3 Origin of dopant gradient in the melt -- 2.9.4 Path to lower resistivity -- 2.10 Growth of large diameter crystals -- 2.10.1 Neck growth for large crystals -- 2.10.2 Neck extension -- 2.10.3 Additional stresses on neck -- 2.10.4 Dislocations oriented in (100) direction in large diameter crystals -- 2.10.5 Crucible wall temperature -- 2.10.6 Double-layered crucible structure -- 2.10.7 Crucible deformations | |
505 | 8 | _a2.10.8 Intentional devitrification -- 2.10.9 Transverse or cusp field for very large crystals -- 2.10.10 Boosting crystal weight -- 2.10.11 Seed chuck -- 2.10.12 Additional challenges -- References -- Further reading -- 3 Properties of silicon crystals -- 3.1 Dopants and impurities -- 3.2 Typical impurity concentrations -- 3.3 Concentration of dopants and impurities in axial direction -- 3.4 Resistivity -- 3.5 Radial variation of impurities and resistivity -- 3.6 Thermal donors -- 3.7 Defects in silicon crystals | |
650 | 0 |
_aMicroelectromechanical systems. _96063 |
|
650 | 0 |
_aSilicon. _918548 |
|
650 | 2 |
_aMicro-Electrical-Mechanical Systems _0(DNLM)D055617 _968705 |
|
650 | 2 |
_aSilicon _0(DNLM)D012825 _918548 |
|
650 | 6 |
_aMicrosyst�emes �electrom�ecaniques. _0(CaQQLa)201-0327119 _968706 |
|
650 | 6 |
_aSilicium. _0(CaQQLa)201-0052755 _968707 |
|
650 | 7 |
_asilicon. _2aat _0(CStmoGRI)aat300011769 _918548 |
|
650 | 7 |
_aMicroelectromechanical systems. _2fast _0(OCoLC)fst01019745 _96063 |
|
650 | 7 |
_aSilicon. _2fast _0(OCoLC)fst01118631 _918548 |
|
700 | 1 |
_aTilli, Markku, _eeditor. _968708 |
|
776 | 0 | 8 |
_iPrint version: _tHandbook of silicon based mems materials and technologies. _bThird edition. _dAmsterdam : Elsevier, 2020 _z9780128177860 _w(OCoLC)1151986311 |
830 | 0 |
_aMicro & nano technologies. _968709 |
|
856 | 4 | 0 |
_3ScienceDirect _uhttps://www.sciencedirect.com/science/book/9780128177860 |
942 | _cEBK | ||
999 |
_c82431 _d82431 |