000 02347cam a2200517 a 4500
001 on1157080086
003 OCoLC
005 20230516165854.0
006 m o d
007 cr un|---aucuu
008 200606s2020 ne o 001 0 eng d
040 _aEBLCP
_beng
_epn
_cEBLCP
_dYDX
_dOPELS
_dEBLCP
_dUKAHL
_dOCLCF
_dNLW
_dOCLCQ
_dCOM
_dOCLCO
_dOCLCQ
_dUKMGB
015 _aGBC338173
_2bnb
016 7 _a020003689
_2Uk
019 _a1156082002
020 _a9780128223437
_q(electronic bk.)
020 _a012822343X
_q(electronic bk.)
020 _z9780128223420
020 _z0128223421
035 _a(OCoLC)1157080086
_z(OCoLC)1156082002
050 4 _aTK7895.M4
072 7 _aTEC
_x021000
_2bisacsh
082 0 4 _a621.39/7
_223
100 1 _aNayfeh, Ammar.
_968755
245 1 0 _aNanomaterials-based charge trapping memory devices /
_cAmmar Nayfeh and Nazek El-Atab.
260 _aAmsterdam :
_bElsevier,
_c2020.
300 _a1 online resource (192 pages)
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
490 1 _aMicro and Nano Technologies
500 _aIncludes index.
588 0 _aPrint version record.
505 0 _a1. Basics of memory devices; 2. Overview of charge trapping memory devices; 3. Materials for future low-power in memory devices; 4. ALD based nano-islands; 5. Laser ablated nanoparticles; 6. Agglomeration-based nanoparticles; 7. Memory devices with ALD based nano-islans; 8. Memory devices with laser ablated nano-particles; 9. Memory devices with agglomeration-based nanoparticles; 10. Scalability of nanomaterials-based memory devices
650 0 _aFerroelectric storage cells.
_968756
650 0 _aNanostructured materials.
_94537
650 2 _aNanostructures
_0(DNLM)D049329
_95928
650 6 _aNanomat�eriaux.
_0(CaQQLa)201-0258061
_968453
650 7 _aFerroelectric storage cells.
_2fast
_0(OCoLC)fst00923115
_968756
650 7 _aNanostructured materials.
_2fast
_0(OCoLC)fst01032630
_94537
700 1 _aEl-Atab, Nazek.
_968757
776 0 8 _iPrint version:
_aNayfeh, Ammar.
_tNanomaterials-Based Charge Trapping Memory Devices.
_dSan Diego : Elsevier, �2020
830 0 _aMicro & nano technologies.
_968758
856 4 0 _3ScienceDirect
_uhttps://www.sciencedirect.com/science/book/9780128223420
942 _cEBK
999 _c82446
_d82446