Dasgupta, Sudeb,
Spacer engineered FinFET architectures : high-performance digital circuit applicators / by Sudeb Dasgupta, Brajesh Kumar Kaushik, Pankaj Kumar Pal. - First edition. - 1 online resource (138 pages) : 49 illustrations
chapter 1 Introduction to Nanoelectronics -- chapter 2 Tri-Gate FinFET Technology and Its Advancement -- chapter 3 Dual-k Spacer Device Architecture and Its Electrostatics -- chapter 4 Capacitive Analysis and Dual-k FinFET-Based Digital Circuit Design -- chapter 5 Design Metric Improvement of a Dual-k Based SRAM Cell -- chapter 6 Statistical Variability and Sensitivity Analysis.
This book focusses on the spacer engineering aspects of novel MOS-based device circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
9781315191089 9781351751025 9781351751049
10.1201/9781315191089 doi
Metal oxide semiconductor field-effect transistors.
Silicon-on-insulator technology.
TK7871.95
621.3815/284
Spacer engineered FinFET architectures : high-performance digital circuit applicators / by Sudeb Dasgupta, Brajesh Kumar Kaushik, Pankaj Kumar Pal. - First edition. - 1 online resource (138 pages) : 49 illustrations
chapter 1 Introduction to Nanoelectronics -- chapter 2 Tri-Gate FinFET Technology and Its Advancement -- chapter 3 Dual-k Spacer Device Architecture and Its Electrostatics -- chapter 4 Capacitive Analysis and Dual-k FinFET-Based Digital Circuit Design -- chapter 5 Design Metric Improvement of a Dual-k Based SRAM Cell -- chapter 6 Statistical Variability and Sensitivity Analysis.
This book focusses on the spacer engineering aspects of novel MOS-based device circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
9781315191089 9781351751025 9781351751049
10.1201/9781315191089 doi
Metal oxide semiconductor field-effect transistors.
Silicon-on-insulator technology.
TK7871.95
621.3815/284