Spacer engineered FinFET architectures : (Record no. 71521)

000 -LEADER
fixed length control field 02048cam a2200337Ii 4500
001 - CONTROL NUMBER
control field 9781315191089
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 180417s2017 flu b ob 001 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781315191089
-- (e-book : PDF)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781351751025
-- (e-book: Mobi)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781351751049
-- (e-book: PDF)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- (hardback)
082 04 - CLASSIFICATION NUMBER
Call Number 621.3815/284
100 1# - AUTHOR NAME
Author Dasgupta, Sudeb,
245 10 - TITLE STATEMENT
Title Spacer engineered FinFET architectures :
Sub Title high-performance digital circuit applicators /
250 ## - EDITION STATEMENT
Edition statement First edition.
300 ## - PHYSICAL DESCRIPTION
Number of Pages 1 online resource (138 pages) :
505 00 - FORMATTED CONTENTS NOTE
Remark 2 chapter 1 Introduction to Nanoelectronics -- chapter 2 Tri-Gate FinFET Technology and Its Advancement -- chapter 3 Dual-k Spacer Device Architecture and Its Electrostatics -- chapter 4 Capacitive Analysis and Dual-k FinFET-Based Digital Circuit Design -- chapter 5 Design Metric Improvement of a Dual-k Based SRAM Cell -- chapter 6 Statistical Variability and Sensitivity Analysis.
520 3# - SUMMARY, ETC.
Summary, etc This book focusses on the spacer engineering aspects of novel MOS-based device circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
700 1# - AUTHOR 2
Author 2 Kaushik, Brajesh Kumar,
700 1# - AUTHOR 2
Author 2 Pal, Pankaj Kumar,
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://www.taylorfrancis.com/books/9781315191089
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Boca Raton, FL :
-- Routledge, an imprint of Taylor and Francis,
-- 2017.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Metal oxide semiconductor field-effect transistors.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Silicon-on-insulator technology.

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