Spacer engineered FinFET architectures : (Record no. 71521)
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000 -LEADER | |
---|---|
fixed length control field | 02048cam a2200337Ii 4500 |
001 - CONTROL NUMBER | |
control field | 9781315191089 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 180417s2017 flu b ob 001 0 eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
ISBN | 9781315191089 |
-- | (e-book : PDF) |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
ISBN | 9781351751025 |
-- | (e-book: Mobi) |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
ISBN | 9781351751049 |
-- | (e-book: PDF) |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
-- | (hardback) |
082 04 - CLASSIFICATION NUMBER | |
Call Number | 621.3815/284 |
100 1# - AUTHOR NAME | |
Author | Dasgupta, Sudeb, |
245 10 - TITLE STATEMENT | |
Title | Spacer engineered FinFET architectures : |
Sub Title | high-performance digital circuit applicators / |
250 ## - EDITION STATEMENT | |
Edition statement | First edition. |
300 ## - PHYSICAL DESCRIPTION | |
Number of Pages | 1 online resource (138 pages) : |
505 00 - FORMATTED CONTENTS NOTE | |
Remark 2 | chapter 1 Introduction to Nanoelectronics -- chapter 2 Tri-Gate FinFET Technology and Its Advancement -- chapter 3 Dual-k Spacer Device Architecture and Its Electrostatics -- chapter 4 Capacitive Analysis and Dual-k FinFET-Based Digital Circuit Design -- chapter 5 Design Metric Improvement of a Dual-k Based SRAM Cell -- chapter 6 Statistical Variability and Sensitivity Analysis. |
520 3# - SUMMARY, ETC. | |
Summary, etc | This book focusses on the spacer engineering aspects of novel MOS-based device circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations. |
700 1# - AUTHOR 2 | |
Author 2 | Kaushik, Brajesh Kumar, |
700 1# - AUTHOR 2 | |
Author 2 | Pal, Pankaj Kumar, |
856 40 - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | https://www.taylorfrancis.com/books/9781315191089 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | eBooks |
264 #1 - | |
-- | Boca Raton, FL : |
-- | Routledge, an imprint of Taylor and Francis, |
-- | 2017. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Metal oxide semiconductor field-effect transistors. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Silicon-on-insulator technology. |
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